Alkoxysilane-Treated SnO2 Interlayer for Energy Band Alignment of SnO2 Electron Injection Layer in Inverted Perovskite Light-Emitting Diodes

Yu Jin Kim, Bong Woo Kim, Sang Hyuk Im

Research output: Contribution to journalArticlepeer-review

Abstract

Efficient inverted perovskite light-emitting diodes (PeLEDs) are demonstrated by the introduction of tetraethyl orthosilicate (TEOS)-incorporated tin oxide (SnO2) interlayer between the SnO2 electron injection layer and the perovskite emission layer. The TEOS incorporation into the SnO2 solution spontaneously converts it to a SiO2–SnO2 composite colloidal solution with a wide band gap, thermal stability, transparency, and chemical stability toward perovskite. The TEOS-incorporated SnO2 interlayer effectively restricts the charge transfer from perovskite into SnO2 and promotes electron injection from SnO2 into perovskite due to the shift toward favorable energy band alignment. In addition, the TEOS-treated interlayer balances the electron injection rate and the hole injection rate, thereby facilitating radiative recombination of the charge carriers injected into perovskite. As a result, the inverted PeLEDs exhibit significantly improved performance of 33 996 cd m−2 luminance, 9.99% of external quantum efficiency, and 44.83 cd A−1 of current efficiency.

Original languageEnglish
Article number2400020
JournalAdvanced Materials Interfaces
Volume11
Issue number16
DOIs
Publication statusPublished - 2024 Jun 6

Bibliographical note

Publisher Copyright:
© 2024 The Authors. Advanced Materials Interfaces published by Wiley-VCH GmbH.

Keywords

  • electron injection layers
  • energy band alignment
  • inverted perovskite light-emitting diodes
  • tetraethylorthosilicate
  • tin oxide

ASJC Scopus subject areas

  • Mechanics of Materials
  • Mechanical Engineering

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