All-carbon nanotube-based junction with virtual source and drain of carbon nanotubes by in situ one-step process for practical integrated nanoelectronics

The authors propose a suspended in situ lateral grown all-carbon nanotube-based junction and report on the dc carrying behaviors of the carbon nanotube junction, especially with and after UV exposure. Also, the release of carriers of the junctions was studied by capacitance (C) measurements with ac excitation. The designed diluted magnetic impurity doped oxide film was adopted as catalyst in the fabrication of the junction. The suspended nanotube channel showed ambipolar function and almost the same low barrier height for the holes and electrons, which was determined by I-T (K) measurements. Subsequent measurements on the channel treated by low intensity UV resulted in a highly conductive channel with high current carrying behavior. Both their junction structure and analogy between dc I-V and capacitance can be applied to develop a practical and accessible system for forming reproducible integrated nanoelectronic junctions as well as to accelerate the realization of all low dimensional molecular devices.