All-electric spin transistor using perpendicular spins

Ji Hoon Kim, Joohyung Bae, Byoung Chul Min, Hyung Jun Kim, Joonyeon Chang, Hyun Cheol Koo

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


All-electric spin transistor is demonstrated using perpendicular spins in an InAs quantum well channel. For the injection and detection of perpendicular spins in the quantum well channel, we use Tb20Fe62Co18/Co40Fe40B20 electrodes, where the Tb20Fe62Co18 layer produces the perpendicular magnetization and the Co40Fe40B20 layer enhances the spin polarization. In this spin transistor device, a gate-controlled spin signal as large as 80 mΩ is observed at 10 K without an external magnetic field. In order to confirm the spin injection and relaxation independently, we measure the three-terminal Hanle effect with an in-plane magnetic field, and obtain a spin signal of 1.7 mΩ at 10 K. These results clearly present that the electric field is an efficient way to modulate spin orientation in a strong spin-orbit interaction system.

Original languageEnglish
Pages (from-to)77-80
Number of pages4
JournalJournal of Magnetism and Magnetic Materials
Publication statusPublished - 2016 Apr 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea Government ( MSIP ) (No. 2010-0017457 , 2011-0027905 , 2015-004870 ) and the KIST & KU-KIST Institutional Programs.

Publisher Copyright:
© 2015 Elsevier B.V. All rights reserved.


  • Interface resistance
  • Perpendicular spin
  • Schottky tunnel barrier
  • Spin transistor

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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