Abstract
We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spincoater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds) as a function of gate bias (Vg). We suggest that ionic motion in the active layer plays an important role for electrical properties.
Original language | English |
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Pages (from-to) | 633-636 |
Number of pages | 4 |
Journal | Journal of Nonlinear Optical Physics and Materials |
Volume | 13 |
Issue number | 3-4 |
DOIs | |
Publication status | Published - 2004 Dec |
Keywords
- Flexible field effect transistor
- Poly(3,4-ethylenedioxythiophene) (PEDOT)
- Polypyrrole (PPy)
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Physics and Astronomy (miscellaneous)