All-polymer based flexible field effect transistor using poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy)

H. S. Kang; H. S. Kang; J. K. Lee; J. Joo; M. S. Lee; M. S. Kim; J. Y. Lee

doi:10.1142/s0218863504002389

All-polymer based flexible field effect transistor using poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy)

H. S. Kang^*
, H. S. Kang
, J. K. Lee
, J. Joo
, M. S. Lee
, M. S. Kim
, J. Y. Lee

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spincoater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I _ds) as a function of gate bias (V_g). We suggest that ionic motion in the active layer plays an important role for electrical properties.

Original language	English
Pages (from-to)	633-636
Number of pages	4
Journal	Journal of Nonlinear Optical Physics and Materials
Volume	13
Issue number	3-4
DOIs	https://doi.org/10.1142/s0218863504002389
Publication status	Published - 2004 Dec

Keywords

Flexible field effect transistor
Poly(3,4-ethylenedioxythiophene) (PEDOT)
Polypyrrole (PPy)

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Physics and Astronomy (miscellaneous)

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10.1142/s0218863504002389

Cite this

@article{fc76627f78634badb8752859d6b89d8c,

title = "All-polymer based flexible field effect transistor using poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy)",

abstract = "We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spincoater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds) as a function of gate bias (Vg). We suggest that ionic motion in the active layer plays an important role for electrical properties.",

keywords = "Flexible field effect transistor, Poly(3,4-ethylenedioxythiophene) (PEDOT), Polypyrrole (PPy)",

author = "Kang, \{H. S.\} and Kang, \{H. S.\} and Lee, \{J. K.\} and J. Joo and Lee, \{M. S.\} and Kim, \{M. S.\} and Lee, \{J. Y.\}",

year = "2004",

month = dec,

doi = "10.1142/s0218863504002389",

language = "English",

volume = "13",

pages = "633--636",

journal = "Journal of Nonlinear Optical Physics and Materials",

issn = "0218-8635",

publisher = "World Scientific",

number = "3-4",

}

TY - JOUR

T1 - All-polymer based flexible field effect transistor using poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy)

AU - Kang, H. S.

AU - Lee, J. K.

AU - Joo, J.

AU - Lee, M. S.

AU - Kim, M. S.

AU - Lee, J. Y.

PY - 2004/12

Y1 - 2004/12

N2 - We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spincoater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds) as a function of gate bias (Vg). We suggest that ionic motion in the active layer plays an important role for electrical properties.

AB - We fabricated all-polymer based flexible field effect transistors (FETs) using poly (3,4-ethylenedioxythiophene) (PEDOT) or polypyrrole (PPy) as the active layer and gate electrode. Polyvinyle cinnamate (PVCN) and epoxy were used for a dielectric layer. The PEDOT and PPy as the active layer and electrode were patterned through simple photo-lithography, and PVCN and epoxy as insulating layers were coated by using a spincoater. We estimated the threshold voltage and trans-conductance through measuring the drain-source current (I ds) as a function of gate bias (Vg). We suggest that ionic motion in the active layer plays an important role for electrical properties.

KW - Flexible field effect transistor

KW - Poly(3,4-ethylenedioxythiophene) (PEDOT)

KW - Polypyrrole (PPy)

UR - https://www.scopus.com/pages/publications/12344337382

U2 - 10.1142/s0218863504002389

DO - 10.1142/s0218863504002389

M3 - Article

AN - SCOPUS:12344337382

SN - 0218-8635

VL - 13

SP - 633

EP - 636

JO - Journal of Nonlinear Optical Physics and Materials

JF - Journal of Nonlinear Optical Physics and Materials

IS - 3-4

ER -

All-polymer based flexible field effect transistor using poly(3,4-ethylenedioxythiophene) (PEDOT) and polypyrrole (PPy)

Abstract

Keywords

ASJC Scopus subject areas

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