We fabricated All-polymer FET (field effect transistor) whose substrate., insulating layer, active layer, and electrodes were composed of the organic polymeric materials. Active layer and all electrodes were made by the simple photolithographic micro-patterning of the electrically conducting poly(3,4-ethylenedioxythiophene). We figured out source-drain current (I SD) of the FET decreased with increase of the positive gate voltage (VG), implying the p-type FET worked in the depletion mode. Turn-off gate voltage, trans-conductance and on/off ratio were measured to be +30 V, -1. 2 μA/V, and 104, respectively. We believe the All-polymer FET has significant advantages over other existing organic FETs since the device can be fabricated by the simple process at room temperature.
Bibliographical noteFunding Information:
Authors would like to acknowledge the financial support of 21 C Frontier R&D Program (2002) by Ministry of Science and Technology, Korea. *Corresponding author. Fax: 82-31-290-7330, E-mail: email@example.com
Copyright 2008 Elsevier B.V., All rights reserved.
- All-polymer FET
- Electrically conducting polymer
- Field effect transistor
- Photolithographic micro-patterning
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics