Alpha particle detection with GaN Schottky diodes

A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; A. V. Markov; E. A. Kozhukhova; I. M. Gazizov; N. G. Kolin; D. I. Merkurisov; V. M. Boiko; A. V. Korulin; V. M. Zalyetin; S. J. Pearton; I. H. Lee; A. M. Dabiran; P. P. Chow

doi:10.1063/1.3261806

Alpha particle detection with GaN Schottky diodes

A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, A. V. Markov, E. A. Kozhukhova, I. M. Gazizov, N. G. Kolin, D. I. Merkurisov, V. M. Boiko, A. V. Korulin, V. M. Zalyetin, S. J. Pearton, I. H. Lee, A. M. Dabiran, P. P. Chow

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43 Citations (Scopus)

Abstract

Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10^-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 10¹⁵ cm^-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec_-0.6 eV traps, increased in MBE grown films.

Original language	English
Article number	103708
Journal	Journal of Applied Physics
Volume	106
Issue number	10
DOIs	https://doi.org/10.1063/1.3261806
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)

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Polyakov, A. Y., Smirnov, N. B., Govorkov, A. V., Markov, A. V., Kozhukhova, E. A., Gazizov, I. M., Kolin, N. G., Merkurisov, D. I., Boiko, V. M., Korulin, A. V., Zalyetin, V. M., Pearton, S. J., Lee, I. H., Dabiran, A. M., & Chow, P. P. (2009). Alpha particle detection with GaN Schottky diodes. Journal of Applied Physics, 106(10), [103708]. https://doi.org/10.1063/1.3261806

@article{99e6535e9ab5456a8cf7e5f1e20f75af,

title = "Alpha particle detection with GaN Schottky diodes",

abstract = "Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.",

author = "Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Markov, {A. V.} and Kozhukhova, {E. A.} and Gazizov, {I. M.} and Kolin, {N. G.} and Merkurisov, {D. I.} and Boiko, {V. M.} and Korulin, {A. V.} and Zalyetin, {V. M.} and Pearton, {S. J.} and Lee, {I. H.} and Dabiran, {A. M.} and Chow, {P. P.}",

note = "Funding Information: The work at IRM, ICP, and IPTP was supported in part by the grant from International Science and Technology Center (ISTC) (Grant No. 3870). ",

year = "2009",

doi = "10.1063/1.3261806",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "10",

}

TY - JOUR

T1 - Alpha particle detection with GaN Schottky diodes

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Markov, A. V.

AU - Kozhukhova, E. A.

AU - Gazizov, I. M.

AU - Kolin, N. G.

AU - Merkurisov, D. I.

AU - Boiko, V. M.

AU - Korulin, A. V.

AU - Zalyetin, V. M.

AU - Pearton, S. J.

AU - Lee, I. H.

AU - Dabiran, A. M.

AU - Chow, P. P.

N1 - Funding Information: The work at IRM, ICP, and IPTP was supported in part by the grant from International Science and Technology Center (ISTC) (Grant No. 3870).

PY - 2009

Y1 - 2009

N2 - Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.

AB - Ni/GaN Schottky diode radiation detectors were fabricated on 3-μm -thick unintentionally doped n-GaN films grown by molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) and on 12-μm -thick undoped n-GaN layers prepared by epitaxial lateral overgrowth (ELOG). The reverse current of all detector structures was < 10-9 A for bias voltages necessary for detector operation, with the level of background donor doping of < 1015 cm-3With this doping level the space charge region of the Schottky diode could be extended to the entire thickness of the films. The charge collection efficiency of the detectors was close to 100% for MOCVD and ELOG detectors for α -particles with range comparable to the thickness of the layer. Electrical properties and deep trap spectra were also studied. The collection efficiency decreased when the concentra-tion of deep electron traps, particularly Ec-0.6 eV traps, increased in MBE grown films.

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U2 - 10.1063/1.3261806

DO - 10.1063/1.3261806

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SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Alpha particle detection with GaN Schottky diodes

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