Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors

Patrick H. Carey; Fan Ren; Jinho Bae; Jihyun Kim; Stephen J. Pearton

doi:10.1149/2162-8777/ab8019

Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors

Patrick H. Carey, Fan Ren, Jinho Bae, Jihyun Kim, Stephen J. Pearton

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 × 10¹³ cm^-2 and 3 × 10¹³ cm^-2, respectively. Carrier removal rates in the range of 2520 cm^-1 and 7100 cm^-1 were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects.

Original language	English
Article number	035008
Journal	ECS Journal of Solid State Science and Technology
Volume	9
Issue number	3
DOIs	https://doi.org/10.1149/2162-8777/ab8019
Publication status	Published - 2020 Jan 3

Bibliographical note

Publisher Copyright:
© 2020 The Electrochemical Society ("ECS"). Published on behalf of ECS by IOP Publishing Limited.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

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10.1149/2162-8777/ab8019

Cite this

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title = "Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors",

abstract = "Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 × 1013 cm-2 and 3 × 1013 cm-2, respectively. Carrier removal rates in the range of 2520 cm-1 and 7100 cm-1 were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects.",

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T1 - Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors

AU - Carey, Patrick H.

AU - Ren, Fan

AU - Bae, Jinho

AU - Kim, Jihyun

AU - Pearton, Stephen J.

PY - 2020/1/3

Y1 - 2020/1/3

N2 - Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 × 1013 cm-2 and 3 × 1013 cm-2, respectively. Carrier removal rates in the range of 2520 cm-1 and 7100 cm-1 were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects.

AB - Alpha particle irradiation at 18 MeV was performed on high aluminum content AlGaN Polarization Doped Field Effect Transistors (POLFTs) and characterized by DC and switching measurements. The POLFETs underwent a reduction in DC saturation current of 23% and 33% at fluences of 1 × 1013 cm-2 and 3 × 1013 cm-2, respectively. Carrier removal rates in the range of 2520 cm-1 and 7100 cm-1 were observed, which are similar to previously reported values for GaN HEMTs. The POLFETs under 100 kHz gate lag measurement demonstrated zero degradation while compared to a traditional GaN HEMT device which suffered serious current collapse as a result of formation of a virtual gate from radiation-induced defects.

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Alpha Particle Irradiation of High Aluminum Content AlGan Polarization Doped Field Effect Transistors

Abstract

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