AlxGa1-xN p-i-n photodiodes on sapphire substrates

D. Walker; P. Kung; P. Sandvik; J. Wu; M. Hamilton; I. H. Lee; J. Diaz; M. Razeghi

doi:10.1117/12.344556

Al_xGa_1-xN p-i-n photodiodes on sapphire substrates

D. Walker^*
, P. Kung
, P. Sandvik
, J. Wu
, M. Hamilton
, I. H. Lee
, J. Diaz
, M. Razeghi

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

10 Citations (Scopus)

Abstract

We report the fabrication and characterization of Al_xGa_1-xN p-i-n photodiodes (0.05≤x≤0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m² to 1 kW/m²) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-Al_xGa_1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non-exponential, with a decay time longer than the RC constant.

Original language	English
Pages (from-to)	193-198
Number of pages	6
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	3629
DOIs	https://doi.org/10.1117/12.344556
Publication status	Published - 1999
Externally published	Yes
Event	Proceedings of the 1999 Photodetectors: Materials and Devices IV - San Jose, CA, USA Duration: 1999 Jan 27 → 1999 Jan 29

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.344556

Cite this

@article{756478bdd51949d998ce51af3fe0b8d1,

title = "AlxGa1-xN p-i-n photodiodes on sapphire substrates",

abstract = "We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05≤x≤0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non-exponential, with a decay time longer than the RC constant.",

author = "D. Walker and P. Kung and P. Sandvik and J. Wu and M. Hamilton and Lee, \{I. H.\} and J. Diaz and M. Razeghi",

year = "1999",

doi = "10.1117/12.344556",

language = "English",

volume = "3629",

pages = "193--198",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

issn = "0277-786X",

publisher = "SPIE",

note = "Proceedings of the 1999 Photodetectors: Materials and Devices IV ; Conference date: 27-01-1999 Through 29-01-1999",

}

TY - JOUR

T1 - AlxGa1-xN p-i-n photodiodes on sapphire substrates

AU - Walker, D.

AU - Kung, P.

AU - Sandvik, P.

AU - Wu, J.

AU - Hamilton, M.

AU - Lee, I. H.

AU - Diaz, J.

AU - Razeghi, M.

PY - 1999

Y1 - 1999

N2 - We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05≤x≤0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non-exponential, with a decay time longer than the RC constant.

AB - We report the fabrication and characterization of AlxGa1-xN p-i-n photodiodes (0.05≤x≤0.30) grown on sapphire by low-pressure metalorganic chemical vapor deposition. The devices present a visible-rejection of about four orders of magnitude with a cutoff wavelength that shifts from 350 nm to 291 nm. They also exhibit a constant responsivity for five decades (30 mW/m2 to 1 kW/m2) of optical power density. Using capacitance measurements, the values for the acceptor concentration in the p-AlxGa1-xN region and the unintentional donor concentration in the intrinsic region are found. Photocurrent decays are exponential for high load resistances, with a time constant that corresponds to the RC product of the system. For low load resistances the transient response becomes non-exponential, with a decay time longer than the RC constant.

UR - https://www.scopus.com/pages/publications/0032628478

U2 - 10.1117/12.344556

DO - 10.1117/12.344556

M3 - Conference article

AN - SCOPUS:0032628478

SN - 0277-786X

VL - 3629

SP - 193

EP - 198

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Proceedings of the 1999 Photodetectors: Materials and Devices IV

Y2 - 27 January 1999 through 29 January 1999

ER -

Al_xGa_1-xN p-i-n photodiodes on sapphire substrates

Abstract

ASJC Scopus subject areas

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