Abstract
A method is presented for patterning the pentacene active layer of organic thin film transistor. The method involves forming a metal pattern on a gate dielectric surface by transfer patterning, depositing pentacene over the whole surface, and then lifting off a bilayer of pentacene on the metal with a flat elastomeric mold. Compared with the method of direct pentacene transfer reported earlier [S. Y. Park, T. Kwon, and H. H. Lee, Adv. Mater. (Weinheim, Ger.) 18, 1861 (2006)], this alternative allows one to choose a surface for larger pentacene grain size and eliminates a high off-current associated with the direct transfer method. The rigid nature of a rigiflex mold allows the pentacene pattern size to be defined in submicrometer range and the flexible nature of rigiflex and elastomeric molds permits large area application.
Original language | English |
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Article number | 093505 |
Journal | Applied Physics Letters |
Volume | 90 |
Issue number | 9 |
DOIs | |
Publication status | Published - 2007 |
Externally published | Yes |
Bibliographical note
Copyright:Copyright 2008 Elsevier B.V., All rights reserved.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)