Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process

Jun Hong Jeon, Jin Young Choi, Won Woong Park, Sun Woo Moon, Sang Ho Lim, Seung Hee Han

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.

    Original languageEnglish
    Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
    Pages547-548
    Number of pages2
    DOIs
    Publication statusPublished - 2011
    Event2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of
    Duration: 2011 Oct 182011 Oct 21

    Publication series

    Name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

    Other

    Other2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
    Country/TerritoryKorea, Republic of
    CityJeju
    Period11/10/1811/10/21

    ASJC Scopus subject areas

    • General Materials Science

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