TY - GEN
T1 - Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process
AU - Jeon, Jun Hong
AU - Choi, Jin Young
AU - Park, Won Woong
AU - Moon, Sun Woo
AU - Lim, Sang Ho
AU - Han, Seung Hee
PY - 2011
Y1 - 2011
N2 - A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.
AB - A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.
UR - http://www.scopus.com/inward/record.url?scp=84860430824&partnerID=8YFLogxK
U2 - 10.1109/NMDC.2011.6155290
DO - 10.1109/NMDC.2011.6155290
M3 - Conference contribution
AN - SCOPUS:84860430824
SN - 9781457721397
T3 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
SP - 547
EP - 548
BT - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
T2 - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Y2 - 18 October 2011 through 21 October 2011
ER -