Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process

Jun Hong Jeon; Jin Young Choi; Won Woong Park; Sun Woo Moon; Sang Ho Lim; Seung Hee Han

doi:10.1109/NMDC.2011.6155290

Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process

Jun Hong Jeon
, Jin Young Choi
, Won Woong Park
, Sun Woo Moon
, Sang Ho Lim
, Seung Hee Han^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.

Original language	English
Title of host publication	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages	547-548
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2011.6155290
Publication status	Published - 2011
Event	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of Duration: 2011 Oct 18 → 2011 Oct 21

Publication series

Name	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Other

Other	2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country/Territory	Korea, Republic of
City	Jeju
Period	11/10/18 → 11/10/21

ASJC Scopus subject areas

General Materials Science

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10.1109/NMDC.2011.6155290

Cite this

Jeon, J. H., Choi, J. Y., Park, W. W., Moon, S. W., Lim, S. H., & Han, S. H. (2011). Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 (pp. 547-548). Article 6155290 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011). https://doi.org/10.1109/NMDC.2011.6155290

Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process. / Jeon, Jun Hong; Choi, Jin Young; Park, Won Woong et al.
2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 547-548 6155290 (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jeon, JH, Choi, JY, Park, WW, Moon, SW, Lim, SH & Han, SH 2011, Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process. in 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011., 6155290, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, pp. 547-548, 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011, Jeju, Korea, Republic of, 11/10/18. https://doi.org/10.1109/NMDC.2011.6155290

Jeon JH, Choi JY, Park WW, Moon SW, Lim SH, Han SH. Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process. In 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011. 2011. p. 547-548. 6155290. (2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011). doi: 10.1109/NMDC.2011.6155290

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title = "Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII\&D and HiPIMS process",

abstract = "A new plasma process, i.e., combination of PIII\&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.",

author = "Jeon, \{Jun Hong\} and Choi, \{Jin Young\} and Park, \{Won Woong\} and Moon, \{Sun Woo\} and Lim, \{Sang Ho\} and Han, \{Seung Hee\}",

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AU - Lim, Sang Ho

AU - Han, Seung Hee

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N2 - A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.

AB - A new plasma process, i.e., combination of PIII&D(Plasma Immersion Ion Implantation and Deposition) and HiPIMS(HIgh Power Impulse Magnetron Sputtering), was developed to implant non-gaseous ions into materials surface. The new process has great advantage that thin film deposition and non-gaseous ion implantation can be achieved in a single plasma chamber. In this process, Al ions were successfully implanted into glass, and Ge thin films of ∼100 nm thickness were deposited on to Al-implanted glass by HiPIMS process. After annealing at ∼400 °C, crystallized Ge thin film could be attained with very low residual Al content.

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BT - 2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

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ER -

Aluminum-induced crystallization of amorphous germanium on glass synthesized by combination of PIII&D and HiPIMS process

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