Ambipolar behavior in MoS2 field effect transistors by using catalytic oxidation

J. H. Choi; H. K. Jang; J. E. Jin; J. M. Shin; D. H. Kim; G. T. Kim

doi:10.1063/1.4966898

Ambipolar behavior in MoS₂ field effect transistors by using catalytic oxidation

J. H. Choi, H. K. Jang, J. E. Jin, J. M. Shin, D. H. Kim, G. T. Kim

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Modulation of electrical properties in MoS₂ flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS₂ field effect transistors (FETs) can be easily obtained by heating MoS₂ flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS₂ + O₂ → MoO_x + SO_x). The catalytic oxidation of MoS₂ flakes between source-drain electrodes resulted in lots of MoO_x nanoparticles (NPs) on MoS₂ flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS₂ FETs was converted into ambipolar transport characteristics by MoO_x NPs which inject hole carriers to MoS₂ flakes.

Original language	English
Article number	183102
Journal	Applied Physics Letters
Volume	109
Issue number	18
DOIs	https://doi.org/10.1063/1.4966898
Publication status	Published - 2016 Oct 31

Bibliographical note

Funding Information:
This research was supported by BK21 Plus Humanware Information Technology and the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2016-R0992-16-1017) supervised by the IITP (Institute for Information & communications Technology Promotion).

Publisher Copyright:
© 2016 Author(s).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4966898

Cite this

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title = "Ambipolar behavior in MoS2 field effect transistors by using catalytic oxidation",

abstract = "Modulation of electrical properties in MoS2 flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS2 field effect transistors (FETs) can be easily obtained by heating MoS2 flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS2 + O2 → MoOx + SOx). The catalytic oxidation of MoS2 flakes between source-drain electrodes resulted in lots of MoOx nanoparticles (NPs) on MoS2 flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS2 FETs was converted into ambipolar transport characteristics by MoOx NPs which inject hole carriers to MoS2 flakes.",

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AU - Choi, J. H.

AU - Jang, H. K.

AU - Jin, J. E.

AU - Shin, J. M.

AU - Kim, D. H.

AU - Kim, G. T.

N1 - Funding Information: This research was supported by BK21 Plus Humanware Information Technology and the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2016-R0992-16-1017) supervised by the IITP (Institute for Information & communications Technology Promotion). Publisher Copyright: © 2016 Author(s).

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AB - Modulation of electrical properties in MoS2 flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS2 field effect transistors (FETs) can be easily obtained by heating MoS2 flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS2 + O2 → MoOx + SOx). The catalytic oxidation of MoS2 flakes between source-drain electrodes resulted in lots of MoOx nanoparticles (NPs) on MoS2 flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS2 FETs was converted into ambipolar transport characteristics by MoOx NPs which inject hole carriers to MoS2 flakes.

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