Ambipolar behavior in MoS2 field effect transistors by using catalytic oxidation

J. H. Choi, H. K. Jang, J. E. Jin, J. M. Shin, D. H. Kim, G. T. Kim

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Modulation of electrical properties in MoS2 flakes is an attractive issue from the point of view of device applications. In this work, we demonstrate that an ambipolar behavior in MoS2 field effect transistors (FETs) can be easily obtained by heating MoS2 flakes under air atmosphere in the presence of cobalt oxide catalyst (MoS2 + O2 → MoOx + SOx). The catalytic oxidation of MoS2 flakes between source-drain electrodes resulted in lots of MoOx nanoparticles (NPs) on MoS2 flakes with thickness reduction from 64 nm to 17 nm. Consequently, N-type behavior of MoS2 FETs was converted into ambipolar transport characteristics by MoOx NPs which inject hole carriers to MoS2 flakes.

Original languageEnglish
Article number183102
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2016 Oct 31

Bibliographical note

Funding Information:
This research was supported by BK21 Plus Humanware Information Technology and the MSIP (Ministry of Science, ICT and Future Planning), Korea, under the ITRC (Information Technology Research Center) support program (IITP-2016-R0992-16-1017) supervised by the IITP (Institute for Information & communications Technology Promotion).

Publisher Copyright:
© 2016 Author(s).

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


Dive into the research topics of 'Ambipolar behavior in MoS2 field effect transistors by using catalytic oxidation'. Together they form a unique fingerprint.

Cite this