TY - JOUR
T1 - Ammonia Gas Sensing Properties of 6,13-Bis(tri-isopropylsilyethynyl) Pentacene Based Field-Effect Transistor
AU - Lee, Byeong Hyeon
AU - Kim, Sangsig
AU - Lee, Sang Yeol
N1 - Funding Information:
This work was supported by the Korea Electric Power Corporation (Grant Number: R19XO01-43).
Publisher Copyright:
© 2022, The Korean Institute of Electrical and Electronic Material Engineers.
PY - 2022/4
Y1 - 2022/4
N2 - The ammonia (NH3) gas sensing properties of pentacene and 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) based field-effect transistors (FETs) were investigated. The pentacene and TIPS-pentacene thin films were deposited by the thermal evaporation process using a shadow mask. The electrical properties of pentacene and TIPS-pentacene such as field-effect mobility, subthreshold slope, threshold voltage, on/off current ratio have been observed as 5.6 × 10−2 and 3.9 × 10−2 cm2/Vs, 0.83 and 1.74 V/dec, 1.7 and 3.2 V, and 106 (for both), respectively. We observed the responsivity to 1 ppm ammonia gas at room temperature, and it was confirmed that pentacene FET hardly reacts. On the other hand, the TIPS-pentacene FET exhibits high reactivity to even low ammonia gas concentrations. It was also confirmed that this phenomenon occurs due to the increased surface gas adsorption rate through the rough surface of TIPS-pentacene film. The electrons in the NH3 adsorbed surface react with the holes of the organic semiconductor to reduce the overall positive charge. As a result, TIPS-pentacene based FET can increase the gas surface adsorption rate, confirming that gas detection is possible even at low concentrations. It is expected that these organic FET-based gas sensors can be integrated into sensor systems that can effectively detect harmful gases in the future.
AB - The ammonia (NH3) gas sensing properties of pentacene and 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) based field-effect transistors (FETs) were investigated. The pentacene and TIPS-pentacene thin films were deposited by the thermal evaporation process using a shadow mask. The electrical properties of pentacene and TIPS-pentacene such as field-effect mobility, subthreshold slope, threshold voltage, on/off current ratio have been observed as 5.6 × 10−2 and 3.9 × 10−2 cm2/Vs, 0.83 and 1.74 V/dec, 1.7 and 3.2 V, and 106 (for both), respectively. We observed the responsivity to 1 ppm ammonia gas at room temperature, and it was confirmed that pentacene FET hardly reacts. On the other hand, the TIPS-pentacene FET exhibits high reactivity to even low ammonia gas concentrations. It was also confirmed that this phenomenon occurs due to the increased surface gas adsorption rate through the rough surface of TIPS-pentacene film. The electrons in the NH3 adsorbed surface react with the holes of the organic semiconductor to reduce the overall positive charge. As a result, TIPS-pentacene based FET can increase the gas surface adsorption rate, confirming that gas detection is possible even at low concentrations. It is expected that these organic FET-based gas sensors can be integrated into sensor systems that can effectively detect harmful gases in the future.
KW - Ammonia gas sensor
KW - Field-effect Transistor
KW - Organic semiconductor
UR - http://www.scopus.com/inward/record.url?scp=85122897938&partnerID=8YFLogxK
U2 - 10.1007/s42341-022-00381-0
DO - 10.1007/s42341-022-00381-0
M3 - Article
AN - SCOPUS:85122897938
SN - 1229-7607
VL - 23
SP - 182
EP - 186
JO - Transactions on Electrical and Electronic Materials
JF - Transactions on Electrical and Electronic Materials
IS - 2
ER -