Ammonia Gas Sensing Properties of 6,13-Bis(tri-isopropylsilyethynyl) Pentacene Based Field-Effect Transistor

Byeong Hyeon Lee; Sangsig Kim; Sang Yeol Lee

doi:10.1007/s42341-022-00381-0

Ammonia Gas Sensing Properties of 6,13-Bis(tri-isopropylsilyethynyl) Pentacene Based Field-Effect Transistor

Byeong Hyeon Lee, Sangsig Kim, Sang Yeol Lee

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The ammonia (NH₃) gas sensing properties of pentacene and 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) based field-effect transistors (FETs) were investigated. The pentacene and TIPS-pentacene thin films were deposited by the thermal evaporation process using a shadow mask. The electrical properties of pentacene and TIPS-pentacene such as field-effect mobility, subthreshold slope, threshold voltage, on/off current ratio have been observed as 5.6 × 10⁻² and 3.9 × 10⁻² cm²/Vs, 0.83 and 1.74 V/dec, 1.7 and 3.2 V, and 10⁶ (for both), respectively. We observed the responsivity to 1 ppm ammonia gas at room temperature, and it was confirmed that pentacene FET hardly reacts. On the other hand, the TIPS-pentacene FET exhibits high reactivity to even low ammonia gas concentrations. It was also confirmed that this phenomenon occurs due to the increased surface gas adsorption rate through the rough surface of TIPS-pentacene film. The electrons in the NH₃ adsorbed surface react with the holes of the organic semiconductor to reduce the overall positive charge. As a result, TIPS-pentacene based FET can increase the gas surface adsorption rate, confirming that gas detection is possible even at low concentrations. It is expected that these organic FET-based gas sensors can be integrated into sensor systems that can effectively detect harmful gases in the future.

Original language	English
Pages (from-to)	182-186
Number of pages	5
Journal	Transactions on Electrical and Electronic Materials
Volume	23
Issue number	2
DOIs	https://doi.org/10.1007/s42341-022-00381-0
Publication status	Published - 2022 Apr

Bibliographical note

Funding Information:
This work was supported by the Korea Electric Power Corporation (Grant Number: R19XO01-43).

Publisher Copyright:
© 2022, The Korean Institute of Electrical and Electronic Material Engineers.

Keywords

Ammonia gas sensor
Field-effect Transistor
Organic semiconductor

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1007/s42341-022-00381-0

Cite this

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title = "Ammonia Gas Sensing Properties of 6,13-Bis(tri-isopropylsilyethynyl) Pentacene Based Field-Effect Transistor",

abstract = "The ammonia (NH3) gas sensing properties of pentacene and 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) based field-effect transistors (FETs) were investigated. The pentacene and TIPS-pentacene thin films were deposited by the thermal evaporation process using a shadow mask. The electrical properties of pentacene and TIPS-pentacene such as field-effect mobility, subthreshold slope, threshold voltage, on/off current ratio have been observed as 5.6 × 10−2 and 3.9 × 10−2 cm2/Vs, 0.83 and 1.74 V/dec, 1.7 and 3.2 V, and 106 (for both), respectively. We observed the responsivity to 1 ppm ammonia gas at room temperature, and it was confirmed that pentacene FET hardly reacts. On the other hand, the TIPS-pentacene FET exhibits high reactivity to even low ammonia gas concentrations. It was also confirmed that this phenomenon occurs due to the increased surface gas adsorption rate through the rough surface of TIPS-pentacene film. The electrons in the NH3 adsorbed surface react with the holes of the organic semiconductor to reduce the overall positive charge. As a result, TIPS-pentacene based FET can increase the gas surface adsorption rate, confirming that gas detection is possible even at low concentrations. It is expected that these organic FET-based gas sensors can be integrated into sensor systems that can effectively detect harmful gases in the future.",

keywords = "Ammonia gas sensor, Field-effect Transistor, Organic semiconductor",

author = "Lee, {Byeong Hyeon} and Sangsig Kim and Lee, {Sang Yeol}",

note = "Funding Information: This work was supported by the Korea Electric Power Corporation (Grant Number: R19XO01-43). Publisher Copyright: {\textcopyright} 2022, The Korean Institute of Electrical and Electronic Material Engineers.",

year = "2022",

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doi = "10.1007/s42341-022-00381-0",

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AU - Lee, Byeong Hyeon

AU - Kim, Sangsig

AU - Lee, Sang Yeol

N1 - Funding Information: This work was supported by the Korea Electric Power Corporation (Grant Number: R19XO01-43). Publisher Copyright: © 2022, The Korean Institute of Electrical and Electronic Material Engineers.

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N2 - The ammonia (NH3) gas sensing properties of pentacene and 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) based field-effect transistors (FETs) were investigated. The pentacene and TIPS-pentacene thin films were deposited by the thermal evaporation process using a shadow mask. The electrical properties of pentacene and TIPS-pentacene such as field-effect mobility, subthreshold slope, threshold voltage, on/off current ratio have been observed as 5.6 × 10−2 and 3.9 × 10−2 cm2/Vs, 0.83 and 1.74 V/dec, 1.7 and 3.2 V, and 106 (for both), respectively. We observed the responsivity to 1 ppm ammonia gas at room temperature, and it was confirmed that pentacene FET hardly reacts. On the other hand, the TIPS-pentacene FET exhibits high reactivity to even low ammonia gas concentrations. It was also confirmed that this phenomenon occurs due to the increased surface gas adsorption rate through the rough surface of TIPS-pentacene film. The electrons in the NH3 adsorbed surface react with the holes of the organic semiconductor to reduce the overall positive charge. As a result, TIPS-pentacene based FET can increase the gas surface adsorption rate, confirming that gas detection is possible even at low concentrations. It is expected that these organic FET-based gas sensors can be integrated into sensor systems that can effectively detect harmful gases in the future.

AB - The ammonia (NH3) gas sensing properties of pentacene and 6,13-Bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) based field-effect transistors (FETs) were investigated. The pentacene and TIPS-pentacene thin films were deposited by the thermal evaporation process using a shadow mask. The electrical properties of pentacene and TIPS-pentacene such as field-effect mobility, subthreshold slope, threshold voltage, on/off current ratio have been observed as 5.6 × 10−2 and 3.9 × 10−2 cm2/Vs, 0.83 and 1.74 V/dec, 1.7 and 3.2 V, and 106 (for both), respectively. We observed the responsivity to 1 ppm ammonia gas at room temperature, and it was confirmed that pentacene FET hardly reacts. On the other hand, the TIPS-pentacene FET exhibits high reactivity to even low ammonia gas concentrations. It was also confirmed that this phenomenon occurs due to the increased surface gas adsorption rate through the rough surface of TIPS-pentacene film. The electrons in the NH3 adsorbed surface react with the holes of the organic semiconductor to reduce the overall positive charge. As a result, TIPS-pentacene based FET can increase the gas surface adsorption rate, confirming that gas detection is possible even at low concentrations. It is expected that these organic FET-based gas sensors can be integrated into sensor systems that can effectively detect harmful gases in the future.

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KW - Field-effect Transistor

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Ammonia Gas Sensing Properties of 6,13-Bis(tri-isopropylsilyethynyl) Pentacene Based Field-Effect Transistor

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