Amorphous InGaZnO thin film transistors with SiO 2/HfO 2 double-layer gate dielectric fabricated at low temperature

Ji Hong Kim; Jae Won Kim; Ji Hyung Roh; Kyung Ju Lee; Kang Min Do; Ju Hong Shin; Sang Mo Koo; Byung Moo Moon

doi:10.1016/j.materresbull.2012.04.134

Amorphous InGaZnO thin film transistors with SiO ₂/HfO ₂ double-layer gate dielectric fabricated at low temperature

Ji Hong Kim
, Jae Won Kim
, Ji Hyung Roh
, Kyung Ju Lee
, Kang Min Do
, Ju Hong Shin
, Sang Mo Koo
, Byung Moo Moon^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO ₂/50 nm-thick HfO ₂ dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO ₂/HfO ₂ showed a higher capacitance of 35 nF/cm ² and a lower leakage current density of 4.6 nA/cm ² than 200 nm-thick SiO ₂. The obtained saturation mobility (μ _sat), threshold voltage (V _th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm ² V ^-1 s ^-1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.

Original language	English
Pages (from-to)	2923-2926
Number of pages	4
Journal	Materials Research Bulletin
Volume	47
Issue number	10
DOIs	https://doi.org/10.1016/j.materresbull.2012.04.134
Publication status	Published - 2012 Oct

Bibliographical note

Funding Information:
This work was supported by Korea University Grant.

Keywords

A. Amorphous materials
B. Laser deposition
D. Dielectric properties
D. Electrical properties

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

10.1016/j.materresbull.2012.04.134

Cite this

@article{95806bc088d348df91cdd2ce514c72e1,

title = "Amorphous InGaZnO thin film transistors with SiO 2/HfO 2 double-layer gate dielectric fabricated at low temperature",

abstract = "Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO 2/50 nm-thick HfO 2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO 2/HfO 2 showed a higher capacitance of 35 nF/cm 2 and a lower leakage current density of 4.6 nA/cm 2 than 200 nm-thick SiO 2. The obtained saturation mobility (μ sat), threshold voltage (V th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm 2 V -1 s -1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.",

keywords = "A. Amorphous materials, B. Laser deposition, D. Dielectric properties, D. Electrical properties",

author = "Kim, \{Ji Hong\} and Kim, \{Jae Won\} and Roh, \{Ji Hyung\} and Lee, \{Kyung Ju\} and Do, \{Kang Min\} and Shin, \{Ju Hong\} and Koo, \{Sang Mo\} and Moon, \{Byung Moo\}",

note = "Funding Information: This work was supported by Korea University Grant.",

year = "2012",

month = oct,

doi = "10.1016/j.materresbull.2012.04.134",

language = "English",

volume = "47",

pages = "2923--2926",

journal = "Materials Research Bulletin",

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T1 - Amorphous InGaZnO thin film transistors with SiO 2/HfO 2 double-layer gate dielectric fabricated at low temperature

AU - Kim, Ji Hong

AU - Kim, Jae Won

AU - Roh, Ji Hyung

AU - Lee, Kyung Ju

AU - Do, Kang Min

AU - Shin, Ju Hong

AU - Koo, Sang Mo

AU - Moon, Byung Moo

N1 - Funding Information: This work was supported by Korea University Grant.

PY - 2012/10

Y1 - 2012/10

N2 - Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO 2/50 nm-thick HfO 2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO 2/HfO 2 showed a higher capacitance of 35 nF/cm 2 and a lower leakage current density of 4.6 nA/cm 2 than 200 nm-thick SiO 2. The obtained saturation mobility (μ sat), threshold voltage (V th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm 2 V -1 s -1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.

AB - Amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) with double-layer gate dielectric were fabricated at low temperature and characterized. A stacked 150 nm-thick SiO 2/50 nm-thick HfO 2 dielectric layer was employed to improve the capacitance and leakage characteristics of the gate oxide. The SiO 2/HfO 2 showed a higher capacitance of 35 nF/cm 2 and a lower leakage current density of 4.6 nA/cm 2 than 200 nm-thick SiO 2. The obtained saturation mobility (μ sat), threshold voltage (V th), and subthreshold swing (S) of the fabricated TFTs were 18.8 cm 2 V -1 s -1, 0.88 V, and 0.48 V/decade, respectively. Furthermore, it was found that oxygen pressure during the IGZO channel layer deposition had a great influence on the performance of the TFTs.

KW - A. Amorphous materials

KW - B. Laser deposition

KW - D. Dielectric properties

KW - D. Electrical properties

UR - https://www.scopus.com/pages/publications/84866315241

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DO - 10.1016/j.materresbull.2012.04.134

M3 - Article

AN - SCOPUS:84866315241

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