TY - JOUR
T1 - An adaptive reconfigurable active voltage doubler/rectifier for extended-range inductive power transmission
AU - Lee, Hyung Min
AU - Ghovanloo, Maysam
N1 - Funding Information:
Manuscript received January 30, 2012; revised May 23, 2012; accepted June 12, 2012. Date of publication July 10, 2012; date of current version August 10, 2012. This work was supported in part by the National Institutes of Health under Grants 1R01NS062031 and 5R21EB009437 and in part by the National Science Foundation under Award ECCS-824199. This brief was recommended by Associate Editor G. Wang.
PY - 2012
Y1 - 2012
N2 - We present an adaptive reconfigurable active voltage doubler (VD)/rectifier (REC) (VD/REC) in standard CMOS, which can adaptively change its topology to either a VD or a REC by sensing the output voltage, leading to more robust inductive power transmission over an extended range. Both active VD and REC modes provide much lower dropout voltage and far better power conversion efficiency (PCE) compared to their passive counterparts by adopting offset-controlled high-speed comparators that drive the rectifying switches at proper times in the high-frequency band. We have fabricated the active VD/REC in a 0.5-μm 3-metal 2-poly CMOS process, occupying 0.585 mm2 of chip area. In an exemplar setup, VD/REC extended the power transmission range by 33% (from 6 to 8 cm) in relative coil distance and 41.5% (from 53° to 75°) in relative coil orientation compared to using the REC alone. While providing 3.1-V dc output across a 500-$\Omega$ load from 2.15- (VD) and 3.7-V (REC) peak ac inputs at 13.56 MHz, VD/REC achieved measured PCEs of 70% and 77%, respectively.
AB - We present an adaptive reconfigurable active voltage doubler (VD)/rectifier (REC) (VD/REC) in standard CMOS, which can adaptively change its topology to either a VD or a REC by sensing the output voltage, leading to more robust inductive power transmission over an extended range. Both active VD and REC modes provide much lower dropout voltage and far better power conversion efficiency (PCE) compared to their passive counterparts by adopting offset-controlled high-speed comparators that drive the rectifying switches at proper times in the high-frequency band. We have fabricated the active VD/REC in a 0.5-μm 3-metal 2-poly CMOS process, occupying 0.585 mm2 of chip area. In an exemplar setup, VD/REC extended the power transmission range by 33% (from 6 to 8 cm) in relative coil distance and 41.5% (from 53° to 75°) in relative coil orientation compared to using the REC alone. While providing 3.1-V dc output across a 500-$\Omega$ load from 2.15- (VD) and 3.7-V (REC) peak ac inputs at 13.56 MHz, VD/REC achieved measured PCEs of 70% and 77%, respectively.
KW - Active rectifier (REC)
KW - active voltage doubler (VD)
KW - adaptive control
KW - high-speed comparators
KW - implantable microelectronic devices (IMDs)
KW - inductive power transmission
KW - near field
UR - http://www.scopus.com/inward/record.url?scp=84865348665&partnerID=8YFLogxK
U2 - 10.1109/TCSII.2012.2204840
DO - 10.1109/TCSII.2012.2204840
M3 - Article
AN - SCOPUS:84865348665
SN - 1549-8328
VL - 59
SP - 481
EP - 485
JO - IEEE Transactions on Circuits and Systems I: Regular Papers
JF - IEEE Transactions on Circuits and Systems I: Regular Papers
IS - 8
M1 - 6236106
ER -