An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin

Jong Chul Lim; Hye Seung Yu; Jae Suk Choi; Soo Won Kim

doi:10.1145/1120725.1121060

An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin

Jong Chul Lim, Hye Seung Yu, Jae Suk Choi, Soo Won Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper proposes the bit-line clamping scheme for a stable signal margin in Magnetoresistance RAM. MRAM distinguishes data by the difference of resistance in MTJ. However, there are so many error sources in MTJ that it limits a yield factor. In this paper, we focus on the resistance variation due to bit-line voltage. For maximum signal difference, we try to reduce bit-line voltage as low as possible. Proposed scheme employs CBLSA, equalizer transistor and ITIMTJ array structure. This method has very excellent bit-line clamping characteristic and overall memory can be designed a simple architecture using current mode sensing. As a result, proposed memory structure can clamp a bit-line voltage under 0.15V and it uses very small power and area. This lower bit-line voltage promises more stable data accessing in MRAM. The circuit is designed in a 0.35um-CMOS technology.

Original language	English
Title of host publication	Proceedings of the 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	877-882
Number of pages	6
ISBN (Print)	0780387368, 9780780387362
DOIs	https://doi.org/10.1145/1120725.1121060
Publication status	Published - 2005
Event	2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005 - Shanghai, China Duration: 2005 Jan 18 → 2005 Jan 21

Publication series

Name	Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC
Volume	2

Other

Other	2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005
Country/Territory	China
City	Shanghai
Period	05/1/18 → 05/1/21

ASJC Scopus subject areas

Computer Science Applications
Computer Graphics and Computer-Aided Design
Electrical and Electronic Engineering

Access to Document

10.1145/1120725.1121060

Cite this

Lim, J. C., Yu, H. S., Choi, J. S., & Kim, S. W. (2005). An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin. In Proceedings of the 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005 (pp. 877-882). Article 1466480 (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC; Vol. 2). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1145/1120725.1121060

An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin. / Lim, Jong Chul; Yu, Hye Seung; Choi, Jae Suk et al.
Proceedings of the 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005. Institute of Electrical and Electronics Engineers Inc., 2005. p. 877-882 1466480 (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Lim, JC, Yu, HS, Choi, JS & Kim, SW 2005, An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin. in Proceedings of the 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005., 1466480, Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC, vol. 2, Institute of Electrical and Electronics Engineers Inc., pp. 877-882, 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005, Shanghai, China, 05/1/18. https://doi.org/10.1145/1120725.1121060

Lim JC, Yu HS, Choi JS, Kim SW. An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin. In Proceedings of the 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005. Institute of Electrical and Electronics Engineers Inc. 2005. p. 877-882. 1466480. (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC). doi: 10.1145/1120725.1121060

Lim, Jong Chul ; Yu, Hye Seung ; Choi, Jae Suk et al. / An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin. Proceedings of the 2005 Asia and South Pacific Design Automation Conference, ASP-DAC 2005. Institute of Electrical and Electronics Engineers Inc., 2005. pp. 877-882 (Proceedings of the Asia and South Pacific Design Automation Conference, ASP-DAC).

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abstract = "This paper proposes the bit-line clamping scheme for a stable signal margin in Magnetoresistance RAM. MRAM distinguishes data by the difference of resistance in MTJ. However, there are so many error sources in MTJ that it limits a yield factor. In this paper, we focus on the resistance variation due to bit-line voltage. For maximum signal difference, we try to reduce bit-line voltage as low as possible. Proposed scheme employs CBLSA, equalizer transistor and ITIMTJ array structure. This method has very excellent bit-line clamping characteristic and overall memory can be designed a simple architecture using current mode sensing. As a result, proposed memory structure can clamp a bit-line voltage under 0.15V and it uses very small power and area. This lower bit-line voltage promises more stable data accessing in MRAM. The circuit is designed in a 0.35um-CMOS technology.",

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AB - This paper proposes the bit-line clamping scheme for a stable signal margin in Magnetoresistance RAM. MRAM distinguishes data by the difference of resistance in MTJ. However, there are so many error sources in MTJ that it limits a yield factor. In this paper, we focus on the resistance variation due to bit-line voltage. For maximum signal difference, we try to reduce bit-line voltage as low as possible. Proposed scheme employs CBLSA, equalizer transistor and ITIMTJ array structure. This method has very excellent bit-line clamping characteristic and overall memory can be designed a simple architecture using current mode sensing. As a result, proposed memory structure can clamp a bit-line voltage under 0.15V and it uses very small power and area. This lower bit-line voltage promises more stable data accessing in MRAM. The circuit is designed in a 0.35um-CMOS technology.

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An advanced bit-line clamping scheme in magnetic RAM for wide sensing margin

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