An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields

Jong Min Lee; S. H. Lim

doi:10.1063/1.3658266

An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields

Jong Min Lee, S. H. Lim

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition.

Original language	English
Article number	093910
Journal	Journal of Applied Physics
Volume	110
Issue number	9
DOIs	https://doi.org/10.1063/1.3658266
Publication status	Published - 2011 Nov 1

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028163).

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3658266

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title = "An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields",

abstract = "Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition.",

author = "{Min Lee}, Jong and Lim, {S. H.}",

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AU - Lim, S. H.

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) grant funded by the Korea government (MEST) (2011-0028163).

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N2 - Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition.

AB - Dynamic magnetization switching can occur under sub-Stoner-Wohlfarth switching fields, and the switching behavior is well described by the switching phase diagram, showing the regions of non-switching, coherent, and incoherent switching. However, in the incoherent switching region, an alternate switching/non-switching behavior is observed under a strong bias field in the transverse direction, invalidating the usual switching phase diagram. This abnormal switching behavior is explained by a damped oscillation motion of the magnetization, which is restricted by the energy well at a given condition.

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An alternate switching/non-switching behavior of a nanostructured magnetic thin film under sub-Stoner-Wohlfarth switching fields

Abstract

Bibliographical note

ASJC Scopus subject areas

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