An analysis of light induced degradation with optical source properties in boron-doped p-type Cz-Si solar cells

Soo Min Kim, Soohyun Bae, Young Do Kim, Sungeun Park, Yoonmook Kang, Haeseok Lee, Donghwan Kim

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When sunlight irradiates a boron-doped p-type solar cell, the formation of BsO2i decreases the power-conversion efficiency in a phenomenon named light-induced degradation (LID). In this study, we used boron-doped p-type Cz-Si solar cells to monitor this degradation process in relation to irradiation wavelength, intensity and duration of the light source, and investigated the reliability of the LID effects, as well. When halogen light irradiated a substrate, the LID rate increased more rapidly than for irradiation with xenon light. For different intensities of halogen light (e.g., 1 SUN and 0.1 SUN), a lower-limit value of LID showed a similar trend in each case; however, the rate reached at the intensity of 0.1 SUN was three times slower than that at 1 SUN. Open-circuit voltage increased with increasing duration of irradiation because the defect-formation rate of LID was slow. Therefore, we suppose that sufficient time is needed to increase LID defects. After a recovery process to restore the initial value, the lower-limit open-circuit voltage exhibited during the re-degradation process showed a trend similar to that in the first degradation process. We suggest that the proportion of the LID in boron-doped p-type Cz-Si solar cells has high correlation with the normalized defect concentrations (NDC) of BsO2i. This can be calculated using the extracted minoritycarrier diffusion-length with internal quantum efficiency (IQE) analysis.

Original languageKorean
Pages (from-to)305-309
Number of pages5
JournalKorean Journal of Materials Research
Issue number6
Publication statusPublished - 2014

Bibliographical note

Publisher Copyright:
© Materials Research Society of Korea.

ASJC Scopus subject areas

  • General Materials Science

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