An electrical analysis of a metal-interlayer-semiconductor structure on high-quality Si1-xGex films for non-alloyed ohmic contact

Seung Geun Kim, Gwang Sik Kim, Seung Hwan Kim, Sun Woo Kim, June Park, Hyun Yong Yu

Research output: Contribution to journalArticlepeer-review


In this paper, we have investigated the effect of a metal-interlayer-semiconductor (MIS) structure on intrinsic silicon-germanium (SiGe) film which is epitaxially grown by ultra-high vacuum chemical vapor deposition (UHV-CVD). Ultra-thin dielectric materials can alleviate Fermi-level pinning at the metal/Si1−xGex contact region by preventing penetration into the Si1−xGex of metal-induced gap states (MIGS) from the metal surface. The electrical properties which are the back-to-back current density and specific contact resistivity of the Ti/TiO2/Si1−xGex structure improve at the TiO2 interlayer thickness of 0.5 nm for all kinds of Si1−xGex film with various levels of germanium (Ge) concentration. The case of Si07Ge03 film, the specific contact resistivity of a Ti/TiO2(0.5 nm)/Si07Ge03 structure is reduced 80-fold compared to that of a Ti/Si07Ge03 structure. The effect of the MIS structure has been well demonstrated on Si1−xGex film, and as a result this structure is suggested as a novel source/drain (S/D) contact scheme for advanced Si1−xGex complementary metal-oxide-semiconductor (CMOS) technology.

Original languageEnglish
Pages (from-to)7323-7326
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number10
Publication statusPublished - 2017 Oct

Bibliographical note

Funding Information:
This work was supported in part by the Technology Innovation Program within the Ministry of Trade, Industry and Energy, Korea, under Grant 10052804, and in part by the Nano Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT and Future Planning (2015M3A7B7045490).

Publisher Copyright:
Copyright © 2017 American Scientific Publishers All rights reserved


  • Epitaxial Growth
  • Fermi-Level Pinning
  • Metal-Interlayer-Semiconductor
  • Silicon-Germanium
  • Source/Drain Contact
  • Specific Contact Resistivity

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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