An electrical switching device controlled by a magnetic field-dependent impact ionization process

Jinseo Lee; Sungjung Joo; Taeyueb Kim; Ki Hyun Kim; Kungwon Rhie; Jinki Hong; Kyung Ho Shin

doi:10.1063/1.3532105

An electrical switching device controlled by a magnetic field-dependent impact ionization process

Jinseo Lee^*
, Sungjung Joo
, Taeyueb Kim
, Ki Hyun Kim
, Kungwon Rhie
, Jinki Hong
, Kyung Ho Shin

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.

Original language	English
Article number	253505
Journal	Applied Physics Letters
Volume	97
Issue number	25
DOIs	https://doi.org/10.1063/1.3532105
Publication status	Published - 2010 Dec 20
Externally published	Yes

Bibliographical note

Funding Information:
This work was supported by the KIST vision 21 program and the midcareer researcher program through the NRF grant funded by the MEST (Grant No. 2010-0000506).

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.3532105

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@article{02a6f0c93759422fb7441b7f522c28f9,

title = "An electrical switching device controlled by a magnetic field-dependent impact ionization process",

abstract = "An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.",

author = "Jinseo Lee and Sungjung Joo and Taeyueb Kim and Kim, \{Ki Hyun\} and Kungwon Rhie and Jinki Hong and Shin, \{Kyung Ho\}",

note = "Funding Information: This work was supported by the KIST vision 21 program and the midcareer researcher program through the NRF grant funded by the MEST (Grant No. 2010-0000506). ",

year = "2010",

month = dec,

day = "20",

doi = "10.1063/1.3532105",

language = "English",

volume = "97",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "25",

}

TY - JOUR

T1 - An electrical switching device controlled by a magnetic field-dependent impact ionization process

AU - Lee, Jinseo

AU - Joo, Sungjung

AU - Kim, Taeyueb

AU - Kim, Ki Hyun

AU - Rhie, Kungwon

AU - Hong, Jinki

AU - Shin, Kyung Ho

N1 - Funding Information: This work was supported by the KIST vision 21 program and the midcareer researcher program through the NRF grant funded by the MEST (Grant No. 2010-0000506).

PY - 2010/12/20

Y1 - 2010/12/20

N2 - An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.

AB - An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.

UR - https://www.scopus.com/pages/publications/78650741211

U2 - 10.1063/1.3532105

DO - 10.1063/1.3532105

M3 - Article

AN - SCOPUS:78650741211

SN - 0003-6951

VL - 97

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 25

M1 - 253505

ER -

An electrical switching device controlled by a magnetic field-dependent impact ionization process

Abstract

Bibliographical note

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