An electrochemical route to MoS2 nanosheets for device applications

Xueqiu You, Na Liu, Cheol Jin Lee, James Jungho Pak

Research output: Contribution to journalArticlepeer-review

48 Citations (Scopus)


This paper presents a facile electrochemical exfoliation method to mass produce device quality MoS2 semiconducting nanosheets. During the exfoliation process, anionic SO42- and OH- ions intercalate into a bulk MoS2 and they form gaseous SO2 or O2 gas bubbles which produce a separating force for MoS2 nanosheets exfoliation. Monolayer or few layers of MoS2 nanosheets were obtained on a SiO2/Si substrate. N-type field effect transistors (n-FETs) were fabricated using the exfoliated MoS2 nanosheets and these n-FETs showed excellent device characteristics. The measured on/off current ratio was around 103, the field-effect mobility on SiO 2 gate dielectrics was 2 cm2/(V s).

Original languageEnglish
Pages (from-to)31-35
Number of pages5
JournalMaterials Letters
Publication statusPublished - 2014 Apr 15

Bibliographical note

Funding Information:
This work was supported by Korea Ministry of Environment as Projects for Developing Eco-Innovation Technologies ( GT-11-G-02-001-1 ), National Research Foundation of Korea Grant funded by the Korean Government (Ministry of Education, Science and Technology) (No. K20903001812-11E0100-01700 ), and Seoul R&BD Program (No. 10920 ).


  • 2-D material
  • Electrochemical exfoliation
  • Field-effect transistor
  • Molybdenum disulfide

ASJC Scopus subject areas

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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