An Investigation of the Damage Mechanisms in Impact Ionization-Induced "Mixed-Mode" Reliability Stressing of Scaled SiGe HBTs

Chendong Zhu; Qingqing Liang; Ragad Al-Huq; John D. Cressler; Alvin Joseph; Jarle Johansen; Tianbing Chen; Guofu Niu; Greg Freeman; Jae Sung Rieh; David Ahlgren

An Investigation of the Damage Mechanisms in Impact Ionization-Induced "Mixed-Mode" Reliability Stressing of Scaled SiGe HBTs

Chendong Zhu, Qingqing Liang, Ragad Al-Huq, John D. Cressler, Alvin Joseph, Jarle Johansen, Tianbing Chen, Guofu Niu, Greg Freeman, Jae Sung Rieh, David Ahlgren

Research output: Contribution to journal › Conference article › peer-review

Abstract

A robust, time-dependent stress methodology for investigating "mixed-mode" (simultaneous high J_C and high V _CB) reliability degradation in advanced SiGe HBTs is introduced. We present comprehensive stress data on scaled 120 GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also employ calibrated MEDICI simulations using the hot carrier injection current technique to better understand the damage mechanisms, and conclude by assessing the impact of mixed-mode stress in aggressively scaled 200 GHz SiGe HBTs.

Original language	English
Pages (from-to)	185-188
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
Publication status	Published - 2003
Externally published	Yes
Event	IEEE International Electron Devices Meeting - Washington, DC, United States Duration: 2003 Dec 8 → 2003 Dec 10

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

Cite this

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title = "An Investigation of the Damage Mechanisms in Impact Ionization-Induced {"}Mixed-Mode{"} Reliability Stressing of Scaled SiGe HBTs",

abstract = "A robust, time-dependent stress methodology for investigating {"}mixed-mode{"} (simultaneous high JC and high V CB) reliability degradation in advanced SiGe HBTs is introduced. We present comprehensive stress data on scaled 120 GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also employ calibrated MEDICI simulations using the hot carrier injection current technique to better understand the damage mechanisms, and conclude by assessing the impact of mixed-mode stress in aggressively scaled 200 GHz SiGe HBTs.",

author = "Chendong Zhu and Qingqing Liang and Ragad Al-Huq and Cressler, {John D.} and Alvin Joseph and Jarle Johansen and Tianbing Chen and Guofu Niu and Greg Freeman and Rieh, {Jae Sung} and David Ahlgren",

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journal = "Technical Digest - International Electron Devices Meeting",

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TY - JOUR

T1 - An Investigation of the Damage Mechanisms in Impact Ionization-Induced "Mixed-Mode" Reliability Stressing of Scaled SiGe HBTs

AU - Zhu, Chendong

AU - Liang, Qingqing

AU - Al-Huq, Ragad

AU - Cressler, John D.

AU - Joseph, Alvin

AU - Johansen, Jarle

AU - Chen, Tianbing

AU - Niu, Guofu

AU - Freeman, Greg

AU - Rieh, Jae Sung

AU - Ahlgren, David

PY - 2003

Y1 - 2003

N2 - A robust, time-dependent stress methodology for investigating "mixed-mode" (simultaneous high JC and high V CB) reliability degradation in advanced SiGe HBTs is introduced. We present comprehensive stress data on scaled 120 GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also employ calibrated MEDICI simulations using the hot carrier injection current technique to better understand the damage mechanisms, and conclude by assessing the impact of mixed-mode stress in aggressively scaled 200 GHz SiGe HBTs.

AB - A robust, time-dependent stress methodology for investigating "mixed-mode" (simultaneous high JC and high V CB) reliability degradation in advanced SiGe HBTs is introduced. We present comprehensive stress data on scaled 120 GHz SiGe HBTs, and use specially designed test structures with variable emitter-to-shallow trench spacing to shed light on the resultant damage mechanisms. We also employ calibrated MEDICI simulations using the hot carrier injection current technique to better understand the damage mechanisms, and conclude by assessing the impact of mixed-mode stress in aggressively scaled 200 GHz SiGe HBTs.

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M3 - Conference article

AN - SCOPUS:0842331399

SN - 0163-1918

SP - 185

EP - 188

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - IEEE International Electron Devices Meeting

Y2 - 8 December 2003 through 10 December 2003

ER -

An Investigation of the Damage Mechanisms in Impact Ionization-Induced "Mixed-Mode" Reliability Stressing of Scaled SiGe HBTs

Abstract

ASJC Scopus subject areas

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