An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

Jong Moo Kim; Joo Won Lee; Jai Kyeong Kim; Byeong Kwon Ju; Jong Seung Kim; Yun Hi Lee; Myung Hwan Oh

doi:10.1063/1.1841470

An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

Jong Moo Kim, Joo Won Lee, Jai Kyeong Kim, Byeong Kwon Ju, Jong Seung Kim, Yun Hi Lee, Myung Hwan Oh

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple fabrication process. Octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayers is deposited on the surface of zirconium oxide dielectric layer. The effect of OTMS interlayer with gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed excellent electrical characteristics with field effect mobility >0.66 cm2 V s and Ion Ioff >10. ⁵

Original language	English
Pages (from-to)	6368-6370
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	26
DOIs	https://doi.org/10.1063/1.1841470
Publication status	Published - 2004 Dec 27
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.1841470

Cite this

@article{deb870d08b8a44b3a88da58e65b3dd43,

title = "An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule",

abstract = "Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple fabrication process. Octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayers is deposited on the surface of zirconium oxide dielectric layer. The effect of OTMS interlayer with gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed excellent electrical characteristics with field effect mobility >0.66 cm2 V s and Ion Ioff >10. 5",

author = "Kim, {Jong Moo} and Lee, {Joo Won} and Kim, {Jai Kyeong} and Ju, {Byeong Kwon} and Kim, {Jong Seung} and Lee, {Yun Hi} and Oh, {Myung Hwan}",

year = "2004",

month = dec,

day = "27",

doi = "10.1063/1.1841470",

language = "English",

volume = "85",

pages = "6368--6370",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "26",

}

TY - JOUR

T1 - An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

AU - Kim, Jong Moo

AU - Lee, Joo Won

AU - Kim, Jai Kyeong

AU - Ju, Byeong Kwon

AU - Kim, Jong Seung

AU - Lee, Yun Hi

AU - Oh, Myung Hwan

PY - 2004/12/27

Y1 - 2004/12/27

N2 - Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple fabrication process. Octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayers is deposited on the surface of zirconium oxide dielectric layer. The effect of OTMS interlayer with gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed excellent electrical characteristics with field effect mobility >0.66 cm2 V s and Ion Ioff >10. 5

AB - Organic thin-film transistors (OTFTs) based on pentacene semiconductor are elaborated on the plastic substrates through a four-level mask process without photolithographic patterning to yield a simple fabrication process. Octadecyltrimethoxysilane (OTMS) as an organic molecule for self-assembled monolayers is deposited on the surface of zirconium oxide dielectric layer. The effect of OTMS interlayer with gate dielectric surface modification on the field effect mobility of OTFTs has been examined and these prototype organic transistors showed excellent electrical characteristics with field effect mobility >0.66 cm2 V s and Ion Ioff >10. 5

UR - http://www.scopus.com/inward/record.url?scp=13444302522&partnerID=8YFLogxK

U2 - 10.1063/1.1841470

DO - 10.1063/1.1841470

M3 - Article

AN - SCOPUS:13444302522

SN - 0003-6951

VL - 85

SP - 6368

EP - 6370

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

ER -

An organic thin-film transistor of high mobility by dielectric surface modification with organic molecule

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this