TY - GEN
T1 - An overview of semiconductor technologies and circuits for terahertz communication applications
AU - Rieh, Jae Sung
AU - Kim, Dong Hyun
PY - 2009
Y1 - 2009
N2 - An overview of the current status of the semiconductor device technologies and circuits for terahertz applications, especially for the broadband wireless communication systems, is provided in this work. Comparison between various semiconductor device technologies such as III-V HEMTs and HBTs, SiGe HBTs, and Si MOSFETs is presented and the current record performances of each technology are described. In addition, the best performing amplifiers, oscillators, and mixers as of today for possible terahertz communication system applications are presented and related issues are discussed.
AB - An overview of the current status of the semiconductor device technologies and circuits for terahertz applications, especially for the broadband wireless communication systems, is provided in this work. Comparison between various semiconductor device technologies such as III-V HEMTs and HBTs, SiGe HBTs, and Si MOSFETs is presented and the current record performances of each technology are described. In addition, the best performing amplifiers, oscillators, and mixers as of today for possible terahertz communication system applications are presented and related issues are discussed.
KW - Broadband communication
KW - High-speed integrated circuits
KW - Semiconductor devices
UR - http://www.scopus.com/inward/record.url?scp=77951156017&partnerID=8YFLogxK
U2 - 10.1109/GLOCOMW.2009.5360683
DO - 10.1109/GLOCOMW.2009.5360683
M3 - Conference contribution
AN - SCOPUS:77951156017
SN - 9781424456260
T3 - 2009 IEEE Globecom Workshops, Gc Workshops 2009
BT - 2009 IEEE Globecom Workshops, Gc Workshops 2009
T2 - 2009 IEEE Globecom Workshops, Gc Workshops 2009
Y2 - 30 November 2009 through 4 December 2009
ER -