Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells

Masafumi Yamaguchi; Nicholas J. Ekins-Daukes; Hae Seok Lee; Taishi Sumita; Mitsuru Imaizumi; Tatsuya Takamoto; Takaaki Agui; Minoru Kaneiwa; Kunio Kamimura; Takeshi Ohshima; Hisayoshi Itoh

doi:10.1109/WCPEC.2006.279838

Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells

Masafumi Yamaguchi, Nicholas J. Ekins-Daukes, Hae Seok Lee, Taishi Sumita, Mitsuru Imaizumi, Tatsuya Takamoto, Takaaki Agui, Minoru Kaneiwa, Kunio Kamimura, Takeshi Ohshima, Hisayoshi Itoh

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

12 Citations (Scopus)

Abstract

The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP subcells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.

Original language	English
Title of host publication	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Publisher	IEEE Computer Society
Pages	1789-1792
Number of pages	4
ISBN (Print)	1424400163, 9781424400164
DOIs	https://doi.org/10.1109/WCPEC.2006.279838
Publication status	Published - 2006
Externally published	Yes
Event	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 - Waikoloa, HI, United States Duration: 2006 May 7 → 2006 May 12

Publication series

Name	Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Volume	2

Other

Other	2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4
Country/Territory	United States
City	Waikoloa, HI
Period	06/5/7 → 06/5/12

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1109/WCPEC.2006.279838

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Yamaguchi, M., Ekins-Daukes, N. J., Lee, H. S., Sumita, T., Imaizumi, M., Takamoto, T., Agui, T., Kaneiwa, M., Kamimura, K., Ohshima, T., & Itoh, H. (2006). Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4 (pp. 1789-1792). Article 4060004 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2). IEEE Computer Society. https://doi.org/10.1109/WCPEC.2006.279838

Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. / Yamaguchi, Masafumi; Ekins-Daukes, Nicholas J.; Lee, Hae Seok et al.
Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. p. 1789-1792 4060004 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4; Vol. 2).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamaguchi, M, Ekins-Daukes, NJ, Lee, HS, Sumita, T, Imaizumi, M, Takamoto, T, Agui, T, Kaneiwa, M, Kamimura, K, Ohshima, T & Itoh, H 2006, Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. in Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4., 4060004, Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, vol. 2, IEEE Computer Society, pp. 1789-1792, 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4, Waikoloa, HI, United States, 06/5/7. https://doi.org/10.1109/WCPEC.2006.279838

Yamaguchi M, Ekins-Daukes NJ, Lee HS, Sumita T, Imaizumi M, Takamoto T et al. Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. In Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society. 2006. p. 1789-1792. 4060004. (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4). doi: 10.1109/WCPEC.2006.279838

Yamaguchi, Masafumi ; Ekins-Daukes, Nicholas J. ; Lee, Hae Seok et al. / Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells. Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4. IEEE Computer Society, 2006. pp. 1789-1792 (Conference Record of the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion, WCPEC-4).

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abstract = "The radiation resistance of individual InGaP and GaAs sub-cells is assessed as a function of base doping under low-energy proton irradiation. It is found that InGaP subcells with low base doping are the most radiation tolerant. However, in GaAs, carrier removal leads to a rapid degradation in sub-cells with low base doping and the most radiation hard sub-cell is achieved using a linearly graded base doping profile.",

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AU - Sumita, Taishi

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AU - Takamoto, Tatsuya

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Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells

Abstract

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ASJC Scopus subject areas

UN SDGs

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