Analysis of aluminum back surface field at different wafer specifications in crystalline silicon solar cells

The purpose of this work is to investigate a back surface field (BSF) at a number of wafer resistivities for industrial crystalline silicon solar cells. As indicated in this manuscript, doping a crucible-grown Czochralski (Cz)-Si ingot with Ga offers a sure way of eliminating light-induced degradation (LID) because LID is composed of B and O complex. However, the low segregation coefficient of Ga in Si causes a much wider resistivity variation in the Ga-doped Cz-Si ingot. This resistivity variation in a Cz-Si wafer at different locations varies the performance, as is already known. In the light of a B-doped wafer, we made wider resistivity in Si ingot; we investigated how resistivities affect the solar cell performance as a function of BSF quality.