Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

Jae Woo Lee; Doyoung Jang; Gyu Tae Kim; Mireille Mouis; Ǵrard Ghibaudo

doi:10.1063/1.3294961

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

Jae Woo Lee
, Doyoung Jang
, Gyu Tae Kim
, Mireille Mouis
, Ǵrard Ghibaudo

Research output: Contribution to journal › Article › peer-review

27 Citations (Scopus)

Abstract

This paper discusses the limit of the sensitivity that can be given to the design of nanowire sensors when the low frequency (LF) noise, due to trapping-detrapping at the nanowire surface, is taken into account. The sensitivity is calculated as the relative conductance variation per unit of external charge density. The LF noise is shown to limit the minimum detectable charge density. Our modeling approach shows how the performance can be optimized by tuning the channel length and the width, and the doping concentration. The implications of these developments are outlined as useful features for the design and the optimization of silicon nanowire sensors.

Original language	English
Article number	044501
Journal	Journal of Applied Physics
Volume	107
Issue number	4
DOIs	https://doi.org/10.1063/1.3294961
Publication status	Published - 2010

Bibliographical note

Funding Information:
This work has been supported by the Nanoscience foundation, Grenoble, France, by the Tera-level Nano-Devices (No. 2009K001355), by the National Research Foundation (NRF) (Grant No. 2009-0083380), by the World Class University program (No. R322009000100820), and by the international Ph.D. co-supervision program between INP-Grenoble and Korea University.

ASJC Scopus subject areas

General Physics and Astronomy

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10.1063/1.3294961

Cite this

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title = "Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors",

abstract = "This paper discusses the limit of the sensitivity that can be given to the design of nanowire sensors when the low frequency (LF) noise, due to trapping-detrapping at the nanowire surface, is taken into account. The sensitivity is calculated as the relative conductance variation per unit of external charge density. The LF noise is shown to limit the minimum detectable charge density. Our modeling approach shows how the performance can be optimized by tuning the channel length and the width, and the doping concentration. The implications of these developments are outlined as useful features for the design and the optimization of silicon nanowire sensors.",

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AU - Lee, Jae Woo

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AU - Kim, Gyu Tae

AU - Mouis, Mireille

AU - Ghibaudo, Ǵrard

N1 - Funding Information: This work has been supported by the Nanoscience foundation, Grenoble, France, by the Tera-level Nano-Devices (No. 2009K001355), by the National Research Foundation (NRF) (Grant No. 2009-0083380), by the World Class University program (No. R322009000100820), and by the international Ph.D. co-supervision program between INP-Grenoble and Korea University.

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N2 - This paper discusses the limit of the sensitivity that can be given to the design of nanowire sensors when the low frequency (LF) noise, due to trapping-detrapping at the nanowire surface, is taken into account. The sensitivity is calculated as the relative conductance variation per unit of external charge density. The LF noise is shown to limit the minimum detectable charge density. Our modeling approach shows how the performance can be optimized by tuning the channel length and the width, and the doping concentration. The implications of these developments are outlined as useful features for the design and the optimization of silicon nanowire sensors.

AB - This paper discusses the limit of the sensitivity that can be given to the design of nanowire sensors when the low frequency (LF) noise, due to trapping-detrapping at the nanowire surface, is taken into account. The sensitivity is calculated as the relative conductance variation per unit of external charge density. The LF noise is shown to limit the minimum detectable charge density. Our modeling approach shows how the performance can be optimized by tuning the channel length and the width, and the doping concentration. The implications of these developments are outlined as useful features for the design and the optimization of silicon nanowire sensors.

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ER -

Analysis of charge sensitivity and low frequency noise limitation in silicon nanowire sensors

Abstract

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