Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor

Keosung Park; Seong Bin Kim; Sinsu Kyoung; Jong Won Choi; Soon Moon Jung; Man Young Sung

doi:10.1109/ICSICT.2014.7021272

Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor

Keosung Park, Seong Bin Kim, Sinsu Kyoung, Jong Won Choi, Soon Moon Jung, Man Young Sung

* Honorary professors

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Photo diode (PD) well potential of 4-Tr CMOS image sensor (CIS) is changed according to the axial direction of off-axis wafer slicing which minimizes the channeling effect of ion implantation process. Channeling causes an incomplete charge transfer in the PD, and then results in the loss of PD well capacity eventually. In this paper, the effect of the axial direction of wafer slicing on the PD well potential profile is simulated with TCAD tool and the simulation result is examined through CMOS process actually. Furthermore, we show a way to compensate the change of effective tilt angle during the ion implantation process for creating N-type region in PD.

Original language	English
Title of host publication	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Editors	Jia Zhou, Ting-Ao Tang
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479932962
DOIs	https://doi.org/10.1109/ICSICT.2014.7021272
Publication status	Published - 2014 Jan 23
Event	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 - Guilin, China Duration: 2014 Oct 28 → 2014 Oct 31

Publication series

Name	Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014

Other

Other	2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014
Country/Territory	China
City	Guilin
Period	14/10/28 → 14/10/31

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

ASJC Scopus subject areas

Hardware and Architecture
Electrical and Electronic Engineering
Computer Science Applications

Access to Document

10.1109/ICSICT.2014.7021272

Cite this

Park, K., Kim, S. B., Kyoung, S., Choi, J. W., Jung, S. M., & Sung, M. Y. (2014). Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor. In J. Zhou, & T-A. Tang (Eds.), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014 Article 7021272 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICSICT.2014.7021272

Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor. / Park, Keosung; Kim, Seong Bin; Kyoung, Sinsu et al.
Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. ed. / Jia Zhou; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. 7021272 (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Park, K, Kim, SB, Kyoung, S, Choi, JW, Jung, SM & Sung, MY 2014, Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor. in J Zhou & T-A Tang (eds), Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014., 7021272, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Institute of Electrical and Electronics Engineers Inc., 2014 12th IEEE International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014, Guilin, China, 14/10/28. https://doi.org/10.1109/ICSICT.2014.7021272

Park K, Kim SB, Kyoung S, Choi JW, Jung SM, Sung MY. Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor. In Zhou J, Tang T-A, editors, Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7021272. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014). doi: 10.1109/ICSICT.2014.7021272

Park, Keosung ; Kim, Seong Bin ; Kyoung, Sinsu et al. / Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor. Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014. editor / Jia Zhou ; Ting-Ao Tang. Institute of Electrical and Electronics Engineers Inc., 2014. (Proceedings - 2014 IEEE 12th International Conference on Solid-State and Integrated Circuit Technology, ICSICT 2014).

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abstract = "Photo diode (PD) well potential of 4-Tr CMOS image sensor (CIS) is changed according to the axial direction of off-axis wafer slicing which minimizes the channeling effect of ion implantation process. Channeling causes an incomplete charge transfer in the PD, and then results in the loss of PD well capacity eventually. In this paper, the effect of the axial direction of wafer slicing on the PD well potential profile is simulated with TCAD tool and the simulation result is examined through CMOS process actually. Furthermore, we show a way to compensate the change of effective tilt angle during the ion implantation process for creating N-type region in PD.",

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AB - Photo diode (PD) well potential of 4-Tr CMOS image sensor (CIS) is changed according to the axial direction of off-axis wafer slicing which minimizes the channeling effect of ion implantation process. Channeling causes an incomplete charge transfer in the PD, and then results in the loss of PD well capacity eventually. In this paper, the effect of the axial direction of wafer slicing on the PD well potential profile is simulated with TCAD tool and the simulation result is examined through CMOS process actually. Furthermore, we show a way to compensate the change of effective tilt angle during the ion implantation process for creating N-type region in PD.

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Analysis of charge transfer loss induced by off-axis slicing in CMOS image sensor

Abstract

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