Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

Seung Geun Jung; Sul Hwan Lee; Choong Ki Kim; Min Soo Yoo; Hyun Yong Yu

doi:10.1109/LED.2020.2989324

Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

Seung Geun Jung, Sul Hwan Lee, Choong Ki Kim, Min Soo Yoo, Hyun Yong Yu

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The turn-around effect of drain linear current (I_dlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of I_dlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3.35% at 1000 s in the off-state stress. The turn-around effect is analyzed by comparing the degradation rates of the performance parameters (I_dlin, I_dsat, SS, and V_th) in the off -state and gate induced drain leakage (gidl) -state stress modes. The results indicate that the I_dlin turn-around effect in the off-state stress, which occurs as an effect of the negative oxide charge (Q_ox) formation, is more significant than that of the interface trap (N_it) for short stress time (before 20 s), and the donor-like N_it formation has major effects compared to those of Q_ox over a long stress time (after 20 s). This observation shows that the stress-induced trap generation can be investigated even if the protection diode exists and critically impacts the drain current degradation and should be seriously considered in the reliability of a DRAM circuit.

Original language	English
Article number	9075291
Pages (from-to)	804-807
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	41
Issue number	6
DOIs	https://doi.org/10.1109/LED.2020.2989324
Publication status	Published - 2020 Jun 1

Bibliographical note

Funding Information:
Manuscript received March 24, 2020; revised April 10, 2020 and April 16, 2020; accepted April 17, 2020. Date of publication April 21, 2020; date of current version May 21, 2020. This work was supported as a research project of SK hynix Inc., Incheon, South Korea. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding author: Hyun-Yong Yu.) Seung-Geun Jung, Sul-Hwan Lee, and Hyun-Yong Yu are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: [email protected]).

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

gidl-state stress
interface trap
off-state stress
oxide charge trap
pMOSFET
turn-around effect

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2020.2989324

Cite this

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title = "Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET",

abstract = "The turn-around effect of drain linear current (Idlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of Idlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3.35% at 1000 s in the off-state stress. The turn-around effect is analyzed by comparing the degradation rates of the performance parameters (Idlin, Idsat, SS, and Vth) in the off -state and gate induced drain leakage (gidl) -state stress modes. The results indicate that the Idlin turn-around effect in the off-state stress, which occurs as an effect of the negative oxide charge (Qox) formation, is more significant than that of the interface trap (Nit) for short stress time (before 20 s), and the donor-like Nit formation has major effects compared to those of Qox over a long stress time (after 20 s). This observation shows that the stress-induced trap generation can be investigated even if the protection diode exists and critically impacts the drain current degradation and should be seriously considered in the reliability of a DRAM circuit.",

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author = "Jung, {Seung Geun} and Lee, {Sul Hwan} and Kim, {Choong Ki} and Yoo, {Min Soo} and Yu, {Hyun Yong}",

note = "Funding Information: Manuscript received March 24, 2020; revised April 10, 2020 and April 16, 2020; accepted April 17, 2020. Date of publication April 21, 2020; date of current version May 21, 2020. This work was supported as a research project of SK hynix Inc., Incheon, South Korea. The review of this letter was arranged by Editor K. J. Kuhn. (Corresponding author: Hyun-Yong Yu.) Seung-Geun Jung, Sul-Hwan Lee, and Hyun-Yong Yu are with the School of Electrical Engineering, Korea University, Seoul 02841, South Korea (e-mail: [email protected]). Publisher Copyright: {\textcopyright} 1980-2012 IEEE.",

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N2 - The turn-around effect of drain linear current (Idlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of Idlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3.35% at 1000 s in the off-state stress. The turn-around effect is analyzed by comparing the degradation rates of the performance parameters (Idlin, Idsat, SS, and Vth) in the off -state and gate induced drain leakage (gidl) -state stress modes. The results indicate that the Idlin turn-around effect in the off-state stress, which occurs as an effect of the negative oxide charge (Qox) formation, is more significant than that of the interface trap (Nit) for short stress time (before 20 s), and the donor-like Nit formation has major effects compared to those of Qox over a long stress time (after 20 s). This observation shows that the stress-induced trap generation can be investigated even if the protection diode exists and critically impacts the drain current degradation and should be seriously considered in the reliability of a DRAM circuit.

AB - The turn-around effect of drain linear current (Idlin) with stress time in a pMOSFET in the off-state stress is investigated. The degradation rate of Idlin increases to a maximum of 6.1% at 20 s of the stress time and then continuously decreases to 3.35% at 1000 s in the off-state stress. The turn-around effect is analyzed by comparing the degradation rates of the performance parameters (Idlin, Idsat, SS, and Vth) in the off -state and gate induced drain leakage (gidl) -state stress modes. The results indicate that the Idlin turn-around effect in the off-state stress, which occurs as an effect of the negative oxide charge (Qox) formation, is more significant than that of the interface trap (Nit) for short stress time (before 20 s), and the donor-like Nit formation has major effects compared to those of Qox over a long stress time (after 20 s). This observation shows that the stress-induced trap generation can be investigated even if the protection diode exists and critically impacts the drain current degradation and should be seriously considered in the reliability of a DRAM circuit.

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Analysis of Drain Linear Current Turn-Around Effect in Off-State Stress Mode in pMOSFET

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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