Analysis of electronic carrier traps in Cr-SrTiO 3-based charge trap flash memory devices

Yujeong Seo; Min Yeong Song; Soyun Park; Tae Geun Kim

doi:10.1063/1.4729127

Analysis of electronic carrier traps in Cr-SrTiO ₃-based charge trap flash memory devices

Yujeong Seo, Min Yeong Song, Soyun Park, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We investigated the deep-level traps formed in Cr-SrTiO ₃/Si ₃N ₄/SiO ₂ structures deposited on n-type Si by deep-level transient spectroscopy (DLTS). Three electron traps, with averaged activation energies of 0.24, 0.28, and 0.53 eV, were observed below the conduction band minimum of Si. Different behaviors in the dependence of DLTS on both filling bias and pulse confirm that the traps originate as the Si ₃N ₄ bulk trap, the Si ₃N ₄/SiO ₂ interfacial trap, and the Si/SiO ₂ interfacial trap. We also demonstrate that a specific point defect is the source of memory behavior in Cr-SrTiO ₃-based fusion-type charge trap flash (CTF) memory devices.

Original language	English
Article number	243501
Journal	Applied Physics Letters
Volume	100
Issue number	24
DOIs	https://doi.org/10.1063/1.4729127
Publication status	Published - 2012 Jun 11

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4729127

Cite this

@article{7e56f27da1c8497ab6160825613f53a3,

title = "Analysis of electronic carrier traps in Cr-SrTiO 3-based charge trap flash memory devices",

abstract = "We investigated the deep-level traps formed in Cr-SrTiO 3/Si 3N 4/SiO 2 structures deposited on n-type Si by deep-level transient spectroscopy (DLTS). Three electron traps, with averaged activation energies of 0.24, 0.28, and 0.53 eV, were observed below the conduction band minimum of Si. Different behaviors in the dependence of DLTS on both filling bias and pulse confirm that the traps originate as the Si 3N 4 bulk trap, the Si 3N 4/SiO 2 interfacial trap, and the Si/SiO 2 interfacial trap. We also demonstrate that a specific point defect is the source of memory behavior in Cr-SrTiO 3-based fusion-type charge trap flash (CTF) memory devices.",

author = "Yujeong Seo and {Yeong Song}, Min and Soyun Park and {Geun Kim}, Tae",

year = "2012",

month = jun,

day = "11",

doi = "10.1063/1.4729127",

language = "English",

volume = "100",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Analysis of electronic carrier traps in Cr-SrTiO 3-based charge trap flash memory devices

AU - Seo, Yujeong

AU - Yeong Song, Min

AU - Park, Soyun

AU - Geun Kim, Tae

PY - 2012/6/11

Y1 - 2012/6/11

N2 - We investigated the deep-level traps formed in Cr-SrTiO 3/Si 3N 4/SiO 2 structures deposited on n-type Si by deep-level transient spectroscopy (DLTS). Three electron traps, with averaged activation energies of 0.24, 0.28, and 0.53 eV, were observed below the conduction band minimum of Si. Different behaviors in the dependence of DLTS on both filling bias and pulse confirm that the traps originate as the Si 3N 4 bulk trap, the Si 3N 4/SiO 2 interfacial trap, and the Si/SiO 2 interfacial trap. We also demonstrate that a specific point defect is the source of memory behavior in Cr-SrTiO 3-based fusion-type charge trap flash (CTF) memory devices.

AB - We investigated the deep-level traps formed in Cr-SrTiO 3/Si 3N 4/SiO 2 structures deposited on n-type Si by deep-level transient spectroscopy (DLTS). Three electron traps, with averaged activation energies of 0.24, 0.28, and 0.53 eV, were observed below the conduction band minimum of Si. Different behaviors in the dependence of DLTS on both filling bias and pulse confirm that the traps originate as the Si 3N 4 bulk trap, the Si 3N 4/SiO 2 interfacial trap, and the Si/SiO 2 interfacial trap. We also demonstrate that a specific point defect is the source of memory behavior in Cr-SrTiO 3-based fusion-type charge trap flash (CTF) memory devices.

UR - http://www.scopus.com/inward/record.url?scp=84863317825&partnerID=8YFLogxK

U2 - 10.1063/1.4729127

DO - 10.1063/1.4729127

M3 - Article

AN - SCOPUS:84863317825

SN - 0003-6951

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 24

M1 - 243501

ER -

Analysis of electronic carrier traps in Cr-SrTiO ₃-based charge trap flash memory devices

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this