Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

T. G. Kim; Y. J. Seo; K. C. Kim; Y. M. Sung; H. Y. Cho; M. S. Joo; S. H. Pyi

doi:10.1063/1.2830000

Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

T. G. Kim, Y. J. Seo, K. C. Kim, Y. M. Sung, H. Y. Cho, M. S. Joo, S. H. Pyi

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

The origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n -type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are identified as the nitride bulk trap and the Si-Si O2 interfacial trap, respectively. The trap depth, viz., vertical distribution of the electron trap, in both nitride bulk and Si-Si O2 interface, are also estimated from the bias voltage dependent DLTS.

Original language	English
Article number	132104
Journal	Applied Physics Letters
Volume	92
Issue number	13
DOIs	https://doi.org/10.1063/1.2830000
Publication status	Published - 2008

Bibliographical note

Funding Information:
This work was supported by the MOST/KOSEF through the Quantum Photonic Science Research Center, Korea.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.2830000

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@article{7af81a03d4044823a311fea8a37570fc,

title = "Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory",

abstract = "The origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n -type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are identified as the nitride bulk trap and the Si-Si O2 interfacial trap, respectively. The trap depth, viz., vertical distribution of the electron trap, in both nitride bulk and Si-Si O2 interface, are also estimated from the bias voltage dependent DLTS.",

author = "Kim, {T. G.} and Seo, {Y. J.} and Kim, {K. C.} and Sung, {Y. M.} and Cho, {H. Y.} and Joo, {M. S.} and Pyi, {S. H.}",

year = "2008",

doi = "10.1063/1.2830000",

language = "English",

volume = "92",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "13",

}

TY - JOUR

T1 - Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

AU - Kim, T. G.

AU - Seo, Y. J.

AU - Kim, K. C.

AU - Sung, Y. M.

AU - Cho, H. Y.

AU - Joo, M. S.

AU - Pyi, S. H.

PY - 2008

Y1 - 2008

N2 - The origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n -type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are identified as the nitride bulk trap and the Si-Si O2 interfacial trap, respectively. The trap depth, viz., vertical distribution of the electron trap, in both nitride bulk and Si-Si O2 interface, are also estimated from the bias voltage dependent DLTS.

AB - The origin of the electron memory trap in an oxide-nitride-oxide structure deposited on n -type Si is investigated by both capacitance-voltage and deep level transient spectroscopy (DLTS). Two electron traps are observed near 0.27 and 0.54 eV, below the conduction band minimum of Si and are identified as the nitride bulk trap and the Si-Si O2 interfacial trap, respectively. The trap depth, viz., vertical distribution of the electron trap, in both nitride bulk and Si-Si O2 interface, are also estimated from the bias voltage dependent DLTS.

UR - http://www.scopus.com/inward/record.url?scp=41649099254&partnerID=8YFLogxK

U2 - 10.1063/1.2830000

DO - 10.1063/1.2830000

M3 - Article

AN - SCOPUS:41649099254

SN - 0003-6951

VL - 92

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 13

M1 - 132104

ER -

Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

Abstract

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