Analysis of electronic memory traps in the oxide-nitride-oxide structure of a polysilicon-oxide-nitride-oxide-semiconductor flash memory

T. G. Kim, Y. J. Seo, K. C. Kim, Y. M. Sung, H. Y. Cho, M. S. Joo, S. H. Pyi

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

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Physics & Astronomy