Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Won Mok Kim; Jin Soo Kim; Jeung Hyun Jeong; Jong Keuk Park; Young Jun Baik; Tae Yeon Seong

doi:10.1016/j.tsf.2013.01.078

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Won Mok Kim, Jin Soo Kim, Jeung Hyun Jeong, Jong Keuk Park, Young Jun Baik, Tae Yeon Seong

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 ¹⁶-10²¹ cm^{- 3}, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

Original language	English
Pages (from-to)	430-435
Number of pages	6
Journal	Thin Solid Films
Volume	531
DOIs	https://doi.org/10.1016/j.tsf.2013.01.078
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).

Keywords

Nonparabolicity
Optical band-gap
ZnO thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.01.078

Cite this

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title = "Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters",

abstract = "Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.",

keywords = "Nonparabolicity, Optical band-gap, ZnO thin film",

author = "Kim, {Won Mok} and Kim, {Jin Soo} and Jeong, {Jeung Hyun} and Park, {Jong Keuk} and Baik, {Young Jun} and Seong, {Tae Yeon}",

note = "Funding Information: This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).",

year = "2013",

doi = "10.1016/j.tsf.2013.01.078",

language = "English",

volume = "531",

pages = "430--435",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

AU - Kim, Won Mok

AU - Kim, Jin Soo

AU - Jeong, Jeung Hyun

AU - Park, Jong Keuk

AU - Baik, Young Jun

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).

PY - 2013

Y1 - 2013

N2 - Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

AB - Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

KW - Nonparabolicity

KW - Optical band-gap

KW - ZnO thin film

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U2 - 10.1016/j.tsf.2013.01.078

DO - 10.1016/j.tsf.2013.01.078

M3 - Article

AN - SCOPUS:84875421406

SN - 0040-6090

VL - 531

SP - 430

EP - 435

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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