Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Won Mok Kim, Jin Soo Kim, Jeung Hyun Jeong, Jong Keuk Park, Young Jun Baik, Tae Yeon Seong

Research output: Contribution to journalArticlepeer-review

30 Citations (Scopus)


Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

Original languageEnglish
Pages (from-to)430-435
Number of pages6
JournalThin Solid Films
Publication statusPublished - 2013

Bibliographical note

Funding Information:
This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).


  • Nonparabolicity
  • Optical band-gap
  • ZnO thin film

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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