Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Won Mok Kim; Jin Soo Kim; Jeung Hyun Jeong; Jong Keuk Park; Young Jun Baik; Tae Yeon Seong

doi:10.1016/j.tsf.2013.01.078

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Won Mok Kim^*
, Jin Soo Kim
, Jeung Hyun Jeong
, Jong Keuk Park
, Young Jun Baik
, Tae Yeon Seong

^*Corresponding author for this work

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

33 Citations (Scopus)

Abstract

Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 ¹⁶-10²¹ cm^{- 3}, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

Original language	English
Pages (from-to)	430-435
Number of pages	6
Journal	Thin Solid Films
Volume	531
DOIs	https://doi.org/10.1016/j.tsf.2013.01.078
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).

Keywords

Nonparabolicity
Optical band-gap
ZnO thin film

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2013.01.078

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@article{302ce3e1ce5b44209714192d246d0983,

title = "Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters",

abstract = "Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.",

keywords = "Nonparabolicity, Optical band-gap, ZnO thin film",

author = "Kim, \{Won Mok\} and Kim, \{Jin Soo\} and Jeong, \{Jeung Hyun\} and Park, \{Jong Keuk\} and Baik, \{Young Jun\} and Seong, \{Tae Yeon\}",

note = "Funding Information: This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).",

year = "2013",

doi = "10.1016/j.tsf.2013.01.078",

language = "English",

volume = "531",

pages = "430--435",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

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TY - JOUR

T1 - Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

AU - Kim, Won Mok

AU - Kim, Jin Soo

AU - Jeong, Jeung Hyun

AU - Park, Jong Keuk

AU - Baik, Young Jun

AU - Seong, Tae Yeon

N1 - Funding Information: This work was supported partially by the Korea Institute of Science and Technology (KIST) internal project under contract 2E22832 , and in part by the Converging Research Center Program through the National Research Foundation of Korea (NRF) grant ( 2009-0082023 ) funded by the Ministry of Education, Science and Technology and by the Korea Science and Engineering Foundation (KOSEF) grant ( 2009-0064868 ).

PY - 2013

Y1 - 2013

N2 - Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

AB - Polycrystalline ZnO thin films both undoped and doped with various types of impurities, which covered the wide carrier concentration range of 10 16-1021 cm- 3, were prepared by magnetron sputtering, and their optical-band gaps were investigated. The experimentally measured optical band-gap shifts were analyzed by taking into account the carrier density dependent effective mass determined by the first-order nonparabolicity approximation. It was shown that the measured shifts in optical band-gaps in ZnO films doped with cationic dopants, which mainly perturb the conduction band, could be well represented by theoretical estimation in which the band-gap widening due to the band-filling effect and the band-gap renormalization due to the many-body effect derived for a weakly interacting electron-gas model were combined and the carrier density dependent effective mass was incorporated.

KW - Nonparabolicity

KW - Optical band-gap

KW - ZnO thin film

UR - https://www.scopus.com/pages/publications/84875421406

U2 - 10.1016/j.tsf.2013.01.078

DO - 10.1016/j.tsf.2013.01.078

M3 - Article

AN - SCOPUS:84875421406

SN - 0040-6090

VL - 531

SP - 430

EP - 435

JO - Thin Solid Films

JF - Thin Solid Films

ER -

Analysis of optical band-gap shift in impurity doped ZnO thin films by using nonparabolic conduction band parameters

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

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