Abstract
In this work, we report a facile probing method for large-area graphene. Patterned defects in graphene were defined by means of photolithography and oxygen plasma treatment. Defect level was characterized using micro-Raman spectroscopy. Only defined region was exposed to oxygen plasma while almost no change is observed in PR remained region. The patterned defects in graphene were visualized using polarized optical microscopy with nematic liquid crystal. Differently aligned textures of liquid crystal result in distinct optical variations.
Original language | English |
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Title of host publication | Wide Bandgap Semiconductor Materials and Devices 16 |
Editors | S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, K. C. Mishra |
Publisher | Electrochemical Society Inc. |
Pages | 281-284 |
Number of pages | 4 |
Edition | 1 |
ISBN (Electronic) | 9781607685913 |
DOIs | |
Publication status | Published - 2015 |
Event | Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28 |
Publication series
Name | ECS Transactions |
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Number | 1 |
Volume | 66 |
ISSN (Print) | 1938-6737 |
ISSN (Electronic) | 1938-5862 |
Other
Other | Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting |
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Country/Territory | United States |
City | Chicago |
Period | 15/5/24 → 15/5/28 |
Bibliographical note
Publisher Copyright:© The Electrochemical Society.
ASJC Scopus subject areas
- General Engineering