Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals

Gwangseok Yang; Sooyeoun Oh; Jihyun Kim

doi:10.1149/06601.0281ecst

Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals

Gwangseok Yang, Sooyeoun Oh, Jihyun Kim

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this work, we report a facile probing method for large-area graphene. Patterned defects in graphene were defined by means of photolithography and oxygen plasma treatment. Defect level was characterized using micro-Raman spectroscopy. Only defined region was exposed to oxygen plasma while almost no change is observed in PR remained region. The patterned defects in graphene were visualized using polarized optical microscopy with nematic liquid crystal. Differently aligned textures of liquid crystal result in distinct optical variations.

Original language	English
Title of host publication	Wide Bandgap Semiconductor Materials and Devices 16
Editors	S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, K. C. Mishra
Publisher	Electrochemical Society Inc.
Pages	281-284
Number of pages	4
Edition	1
ISBN (Electronic)	9781607685913
DOIs	https://doi.org/10.1149/06601.0281ecst
Publication status	Published - 2015
Event	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting - Chicago, United States Duration: 2015 May 24 → 2015 May 28

Publication series

Name	ECS Transactions
Number	1
Volume	66
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting
Country/Territory	United States
City	Chicago
Period	15/5/24 → 15/5/28

Bibliographical note

Publisher Copyright:
© The Electrochemical Society.

ASJC Scopus subject areas

General Engineering

Access to Document

10.1149/06601.0281ecst

Cite this

Yang, G., Oh, S., & Kim, J. (2015). Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals. In S. Jang, K. Shenai, G. W. Hunter, F. Ren, C. O'Dwyer, & K. C. Mishra (Eds.), Wide Bandgap Semiconductor Materials and Devices 16 (1 ed., pp. 281-284). (ECS Transactions; Vol. 66, No. 1). Electrochemical Society Inc.. https://doi.org/10.1149/06601.0281ecst

Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals. / Yang, Gwangseok; Oh, Sooyeoun; Kim, Jihyun.
Wide Bandgap Semiconductor Materials and Devices 16. ed. / S. Jang; K. Shenai; G. W. Hunter; F. Ren; C. O'Dwyer; K. C. Mishra. 1. ed. Electrochemical Society Inc., 2015. p. 281-284 (ECS Transactions; Vol. 66, No. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yang, G, Oh, S & Kim, J 2015, Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals. in S Jang, K Shenai, GW Hunter, F Ren, C O'Dwyer & KC Mishra (eds), Wide Bandgap Semiconductor Materials and Devices 16. 1 edn, ECS Transactions, no. 1, vol. 66, Electrochemical Society Inc., pp. 281-284, Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting, Chicago, United States, 15/5/24. https://doi.org/10.1149/06601.0281ecst

@inproceedings{14f9f86e0d3f4e8e9c5476b8c28c4f06,

title = "Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals",

abstract = "In this work, we report a facile probing method for large-area graphene. Patterned defects in graphene were defined by means of photolithography and oxygen plasma treatment. Defect level was characterized using micro-Raman spectroscopy. Only defined region was exposed to oxygen plasma while almost no change is observed in PR remained region. The patterned defects in graphene were visualized using polarized optical microscopy with nematic liquid crystal. Differently aligned textures of liquid crystal result in distinct optical variations.",

author = "Gwangseok Yang and Sooyeoun Oh and Jihyun Kim",

note = "Publisher Copyright: {\textcopyright} The Electrochemical Society.; Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting ; Conference date: 24-05-2015 Through 28-05-2015",

year = "2015",

doi = "10.1149/06601.0281ecst",

language = "English",

series = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

number = "1",

pages = "281--284",

editor = "S. Jang and K. Shenai and Hunter, \{G. W.\} and F. Ren and C. O'Dwyer and Mishra, \{K. C.\}",

booktitle = "Wide Bandgap Semiconductor Materials and Devices 16",

edition = "1",

}

TY - GEN

T1 - Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals

AU - Yang, Gwangseok

AU - Oh, Sooyeoun

AU - Kim, Jihyun

N1 - Publisher Copyright: © The Electrochemical Society.

PY - 2015

Y1 - 2015

N2 - In this work, we report a facile probing method for large-area graphene. Patterned defects in graphene were defined by means of photolithography and oxygen plasma treatment. Defect level was characterized using micro-Raman spectroscopy. Only defined region was exposed to oxygen plasma while almost no change is observed in PR remained region. The patterned defects in graphene were visualized using polarized optical microscopy with nematic liquid crystal. Differently aligned textures of liquid crystal result in distinct optical variations.

AB - In this work, we report a facile probing method for large-area graphene. Patterned defects in graphene were defined by means of photolithography and oxygen plasma treatment. Defect level was characterized using micro-Raman spectroscopy. Only defined region was exposed to oxygen plasma while almost no change is observed in PR remained region. The patterned defects in graphene were visualized using polarized optical microscopy with nematic liquid crystal. Differently aligned textures of liquid crystal result in distinct optical variations.

UR - https://www.scopus.com/pages/publications/84931333123

U2 - 10.1149/06601.0281ecst

DO - 10.1149/06601.0281ecst

M3 - Conference contribution

AN - SCOPUS:84931333123

T3 - ECS Transactions

SP - 281

EP - 284

BT - Wide Bandgap Semiconductor Materials and Devices 16

A2 - Jang, S.

A2 - Shenai, K.

A2 - Hunter, G. W.

A2 - Ren, F.

A2 - O'Dwyer, C.

A2 - Mishra, K. C.

PB - Electrochemical Society Inc.

T2 - Symposium on Wide Bandgap Semiconductor Materials and Devices 16 - 227th ECS Meeting

Y2 - 24 May 2015 through 28 May 2015

ER -

Analysis of patterned defects on graphene using micro-Raman spectroscopy and liquid crystals

Abstract

Publication series

Other

Bibliographical note

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this