Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Ho Myoung An; Hee Dong Kim; Tae Geun Kim

doi:10.1016/j.materresbull.2013.05.008

Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Ho Myoung An, Hee Dong Kim, Tae Geun Kim

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The energy distribution and density of interface traps (D_it) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 10¹² cm^-2 eV^-1 to 3.66 × 10¹³ cm^-2 eV^-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for D_it of the TFT-type cells was similar to those of bulk-type cells.

Original language	English
Pages (from-to)	5084-5087
Number of pages	4
Journal	Materials Research Bulletin
Volume	48
Issue number	12
DOIs	https://doi.org/10.1016/j.materresbull.2013.05.008
Publication status	Published - 2013

Bibliographical note

Funding Information:
This work was supported in part by the Leading Foreign Research Institute Recruitment Program (2012-00109) and in part by the Basic Science Research Program (2012R1A1A2043542) through the National Research Foundation of Korea, funded by the Ministry of Education, Science and Technology .

Keywords

3D NAND
CTF
Charge pumping technique
SONOS

ASJC Scopus subject areas

General Materials Science
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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10.1016/j.materresbull.2013.05.008

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title = "Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications",

abstract = "The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.",

keywords = "3D NAND, CTF, Charge pumping technique, SONOS",

author = "An, {Ho Myoung} and Kim, {Hee Dong} and Kim, {Tae Geun}",

note = "Funding Information: This work was supported in part by the Leading Foreign Research Institute Recruitment Program (2012-00109) and in part by the Basic Science Research Program (2012R1A1A2043542) through the National Research Foundation of Korea, funded by the Ministry of Education, Science and Technology .",

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AU - An, Ho Myoung

AU - Kim, Hee Dong

AU - Kim, Tae Geun

N1 - Funding Information: This work was supported in part by the Leading Foreign Research Institute Recruitment Program (2012-00109) and in part by the Basic Science Research Program (2012R1A1A2043542) through the National Research Foundation of Korea, funded by the Ministry of Education, Science and Technology .

PY - 2013

Y1 - 2013

N2 - The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

AB - The energy distribution and density of interface traps (Dit) are directly investigated from bulk-type and thin-film transistor (TFT)-type charge trap flash memory cells with tunnel oxide degradation, under program/erase (P/E) cycling using a charge pumping (CP) technique, in view of application in a 3-demension stackable NAND flash memory cell. After P/E cycling in bulk-type devices, the interface trap density gradually increased from 1.55 × 1012 cm-2 eV-1 to 3.66 × 1013 cm-2 eV-1 due to tunnel oxide damage, which was consistent with the subthreshold swing and transconductance degradation after P/E cycling. Its distribution moved toward shallow energy levels with increasing cycling numbers, which coincided with the decay rate degradation with short-term retention time. The tendency extracted with the CP technique for Dit of the TFT-type cells was similar to those of bulk-type cells.

KW - 3D NAND

KW - CTF

KW - Charge pumping technique

KW - SONOS

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Analysis of the energy distribution of interface traps related to tunnel oxide degradation using charge pumping techniques for 3D NAND flash applications

Abstract

Bibliographical note

Keywords

ASJC Scopus subject areas

Access to Document

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