Abstract
We exploited the coupling efficiency between a rear-facet emission of a light emitting device and a monitoring photo detector (mPD) in a transistor-outlined (TO) package. By considering the far-field angles of the back illuminating light and the detector area, we could achieve two-dimensional tolerance of the coupling efficiency in the compact microelectronic package under mechanical limitation.
| Original language | English |
|---|---|
| Pages (from-to) | 467-470 |
| Number of pages | 4 |
| Journal | Optik |
| Volume | 121 |
| Issue number | 5 |
| DOIs | |
| Publication status | Published - 2010 Mar |
| Externally published | Yes |
Keywords
- Far fields
- Laser diode
- Packaging
- Photodiode
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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