A parametric sensitivity analysis has been performed on a new type of synthetic antiferromagnet-based spin valves (SSVs) comprising a modified pinned structure using CoFe (P1)-Ru-CoFe (P2)-Ru-CoFe (P3). Recently, it was demonstrated that this type of modified synthetic spin valves (MSSVs) could deliver larger effective exchange field (Hex.eff) as well as better bias point control capability over a conventional SSV, in particular, when the device size became as small as 50 nm. A series of calculations based on the Landau-Lifschitz-Gilbert equation incorporating a single-domain multilayer model was carried out. We considered three key parameters such as an indirect exchange coupling energy ( J1) between P1-P2 as well as P2-P3, an exchange biasing energy between P1 and antiferromagnetic layer (Jeb), and a relative giant magnetoresistive contribution (R) due to the angular difference of magnetizations in the pinned structure. It was found that J 1 was mainly related with the saturation field (Hs) and the field at which the maximum subpeak magnetoresistance (MR) ratio (H sub) occurred, while Jeb influenced on the H ex.eff. R raised the MR ratio between the main peak and subpeak. As J1 increased, Hex.eff also increased. As the cell dimension decreased below 1 μm, Hex.eff and Hs increased while Hsub decreased rapidly.
Bibliographical noteFunding Information:
Manuscript received January 6, 2003. This work was supported by Grant R01-2000-000-00234-0 from the Basic Research Program of the Korea Science and Engineering Foundation, the National Program for Tera-level Nanodevices of the Korea Ministry of Science and Technology as one of the 21 century Frontier Programs, the National Research Laboratory Program, the Advanced Backbone Information and Telecommunication Technology Development Project of the Korea Ministry of Information and Communication through Samsung Advanced Institute of Technology, and by the DuPont Young Professor Program.
- Bias point
- Synthetic antiferromagnet
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering