In this paper, we present a full analytical model that can simulate an entire CMUT-FET structure with high accuracy and fast computation. Using the proposed analytical model, electromechanical properties, electrical characteristics (Id-Vg), and pressure sensitivity of the CMUT-FET are simulated and analyzed. The optimal bias point of the CMUT-FET is found to be 1.3 V (Sub-threshold operation), at which the calculated pressure sensitivity is 2.584 × 10-6 Pa-1. This optimum bias point is almost 11 times lower than 80 % pull-in voltage for conventional high-frequency CMUTs. As a consecutive work, we also report on a fabrication process of the CMUT-FET with nickel-silicided source/drain junctions and low-temperature wafer bonding. The low-temperature wafer bonding successfully demonstrates the direct integration of CMUT on FET, which is verified via cross-sectional inspection. The fabrication technique is a promising solution and can be developed further to for integration with ICs.
|Title of host publication||2017 IEEE International Ultrasonics Symposium, IUS 2017|
|Publisher||IEEE Computer Society|
|Publication status||Published - 2017 Oct 31|
|Event||2017 IEEE International Ultrasonics Symposium, IUS 2017 - Washington, United States|
Duration: 2017 Sept 6 → 2017 Sept 9
|Name||IEEE International Ultrasonics Symposium, IUS|
|Other||2017 IEEE International Ultrasonics Symposium, IUS 2017|
|Period||17/9/6 → 17/9/9|
Bibliographical noteFunding Information:
ACKNOWLEDGMENT This work was supported by the KIST institutional program (2E26180) and Nano͎ Material Technology Development Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Science, ICT & Future Planning (2015M3A7B7045470). The FET part and low temperature wafer bonding processes were done at Korea National Nanofab Center (NNFC, Daejeon, South Korea) and other post fabrication processes were executed at KIST Micro-Nano Fabrication Center (Seoul, South Korea).
© 2017 IEEE.
- Analytical model
- Field-effect transistor-embedded capacitive micromachined ultrasonic transducer (CMUT-FET)
- High-frequency operation
- Low-temperature wafer bonding
ASJC Scopus subject areas
- Acoustics and Ultrasonics