Abstract
We present a new model to demonstrate the effect of heavily doped interfacial layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-ILsemiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 1020 cm-3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.
Original language | English |
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Article number | 6822535 |
Pages (from-to) | 705-707 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 35 |
Issue number | 7 |
DOIs | |
Publication status | Published - 2014 Jul |
Keywords
- CMOS
- Schottky barrier
- contact resistivity
- fermi level unpinning
- germanium
- interfacial layer
- ohmic contact
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering