Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure

Jeong Kyu Kim; Gwang Sik Kim; Changhwan Shin; Jin Hong Park; Krishna C. Saraswat; Hyun Yong Yu

doi:10.1109/LED.2014.2323256

Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure

Jeong Kyu Kim, Gwang Sik Kim, Changhwan Shin, Jin Hong Park, Krishna C. Saraswat, Hyun Yong Yu

School of Electrical Engineering

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

We present a new model to demonstrate the effect of heavily doped interfacial layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-ILsemiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 10²⁰ cm^-3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.

Original language	English
Article number	6822535
Pages (from-to)	705-707
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	7
DOIs	https://doi.org/10.1109/LED.2014.2323256
Publication status	Published - 2014 Jul

Keywords

CMOS
Schottky barrier
contact resistivity
fermi level unpinning
germanium
interfacial layer
ohmic contact

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2323256

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title = "Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure",

abstract = "We present a new model to demonstrate the effect of heavily doped interfacial layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-ILsemiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 1020 cm-3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.",

keywords = "CMOS, Schottky barrier, contact resistivity, fermi level unpinning, germanium, interfacial layer, ohmic contact",

author = "Kim, {Jeong Kyu} and Kim, {Gwang Sik} and Changhwan Shin and Park, {Jin Hong} and Saraswat, {Krishna C.} and Yu, {Hyun Yong}",

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AU - Kim, Jeong Kyu

AU - Kim, Gwang Sik

AU - Shin, Changhwan

AU - Park, Jin Hong

AU - Saraswat, Krishna C.

AU - Yu, Hyun Yong

PY - 2014/7

Y1 - 2014/7

N2 - We present a new model to demonstrate the effect of heavily doped interfacial layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-ILsemiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 1020 cm-3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.

AB - We present a new model to demonstrate the effect of heavily doped interfacial layer (IL) insertion on contact resistivity reduction in metal-germanium (Ge) structure. It is found that the doping of IL results in lowering Schottky barrier of Ge significantly, and based on this lowering effect, a metal-ILsemiconductor model is newly proposed. From this model, the abrupt reduction of contact resistivity is observed in heavily doped condition as IL thickness is increased, and the minimum contact resistivity for 1 × 1020 cm-3 doping concentration is reduced by ×25 compared with that of undoped one. These results are promising toward enhancing the device performance of Ge MOSFET, which is for sub-22-nm CMOS technology.

KW - CMOS

KW - Schottky barrier

KW - contact resistivity

KW - fermi level unpinning

KW - germanium

KW - interfacial layer

KW - ohmic contact

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DO - 10.1109/LED.2014.2323256

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JF - IEEE Electron Device Letters

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Analytical study of interfacial layer doping effect on contact resistivity in metal-interfacial layer-Ge structure

Abstract

Keywords

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