Anisotropic magnetoresistance in a Ni                         81                         Fe                         19                         /SiO                         2                         /Ca-Bi                         2                         Se                         3                          hybrid structure

Sung Jong Kim; Youn Ho Park; Chaun Jang; Andrzej Hruban; Hyun Cheol Koo

doi:10.1016/j.tsf.2019.03.004

Anisotropic magnetoresistance in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-Bi ₂ Se ₃ hybrid structure

Sung Jong Kim, Youn Ho Park, Chaun Jang, Andrzej Hruban, Hyun Cheol Koo

Research output: Contribution to journal › Article › peer-review

1 Citation (Scopus)

Abstract

A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-doped Bi ₂ Se ₃ structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-doped Bi ₂ Se ₃ hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

Original language	English
Pages (from-to)	87-91
Number of pages	5
Journal	Thin Solid Films
Volume	676
DOIs	https://doi.org/10.1016/j.tsf.2019.03.004
Publication status	Published - 2019 Apr 30

Bibliographical note

Funding Information:
This work was supported by KIST & KU-KIST Institutional Programs and National Research Council of Science & Technology (NST) grant (No. CAP-16-01-KIST ) of the government of Korea (MSIP).

Publisher Copyright:
© 2019 Elsevier B.V.

Copyright:
Copyright 2019 Elsevier B.V., All rights reserved.

Keywords

Anisotropic magnetoresistance
Magnetic anisotropy
Magnetic switching
Spin-momentum locking
Topological insulator

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Access to Document

10.1016/j.tsf.2019.03.004

Cite this

Kim, S. J., Park, Y. H., Jang, C., Hruban, A., & Koo, H. C. (2019). Anisotropic magnetoresistance in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-Bi ₂ Se ₃ hybrid structure Thin Solid Films, 676, 87-91. https://doi.org/10.1016/j.tsf.2019.03.004

Anisotropic magnetoresistance in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-Bi ₂ Se ₃ hybrid structure . / Kim, Sung Jong; Park, Youn Ho; Jang, Chaun et al.
In: Thin Solid Films, Vol. 676, 30.04.2019, p. 87-91.

Research output: Contribution to journal › Article › peer-review

Kim, SJ, Park, YH, Jang, C, Hruban, A & Koo, HC 2019, ' Anisotropic magnetoresistance in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-Bi ₂ Se ₃ hybrid structure ', Thin Solid Films, vol. 676, pp. 87-91. https://doi.org/10.1016/j.tsf.2019.03.004

Kim SJ, Park YH, Jang C, Hruban A, Koo HC. Anisotropic magnetoresistance in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-Bi ₂ Se ₃ hybrid structure Thin Solid Films. 2019 Apr 30;676:87-91. doi: 10.1016/j.tsf.2019.03.004

Kim, Sung Jong ; Park, Youn Ho ; Jang, Chaun et al. / Anisotropic magnetoresistance in a Ni ₈₁ Fe ₁₉ /SiO ₂ /Ca-Bi ₂ Se ₃ hybrid structure In: Thin Solid Films. 2019 ; Vol. 676. pp. 87-91.

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abstract = " A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices. ",

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N2 - A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

AB - A topological insulator gives a great concern in the field of thin film devices because it delivers a conducting state and a high spin-momentum locking at the material surface. To investigate the interfacial coupling between ferromagnet and topological insulator, the anisotropic magnetoresistance (AMR) in a Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 structure is observed. The AMR is determined by the alignment between the magnetization direction of a ferromagnetic electrode and the bias current direction. The bias current induces a strong spin-momentum locking along the transverse direction which changes the magnetic anisotropy and switching process of the ferromagnetic layer. Furthermore, the angle dependence of magnetoresistance clearly shows that the amplitude of AMR is enhanced due to the coupling of Ni 81 Fe 19 /SiO 2 /Ca-doped Bi 2 Se 3 hybrid structure. These results provide an efficient technique for manipulating magnetization reversal of the ferromagnetic material in spin-based devices.

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