Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs

Seong Hoon Shim, Kyung Ho Kim, Hyung Jun Kim, Yun Hi Lee, Joonyeon Chang

    Research output: Contribution to journalArticlepeer-review

    2 Citations (Scopus)

    Abstract

    The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.

    Original languageEnglish
    Pages (from-to)6333-6335
    Number of pages3
    JournalJournal of Nanoscience and Nanotechnology
    Volume13
    Issue number9
    DOIs
    Publication statusPublished - 2013 Sept

    Keywords

    • Anisotropic magnetoresistance (AMR)
    • Fe/MgO/GaAs
    • Ordinary magnetoresistance (OMR)

    ASJC Scopus subject areas

    • Bioengineering
    • General Chemistry
    • Biomedical Engineering
    • General Materials Science
    • Condensed Matter Physics

    Fingerprint

    Dive into the research topics of 'Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs'. Together they form a unique fingerprint.

    Cite this