Abstract
The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 6333-6335 |
| Number of pages | 3 |
| Journal | Journal of Nanoscience and Nanotechnology |
| Volume | 13 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2013 Sept |
Keywords
- Anisotropic magnetoresistance (AMR)
- Fe/MgO/GaAs
- Ordinary magnetoresistance (OMR)
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics