Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs

Seong Hoon Shim, Kyung Ho Kim, Hyung Jun Kim, Yun Hi Lee, Joonyeon Chang

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)


The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.

Original languageEnglish
Pages (from-to)6333-6335
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Issue number9
Publication statusPublished - 2013 Sept


  • Anisotropic magnetoresistance (AMR)
  • Fe/MgO/GaAs
  • Ordinary magnetoresistance (OMR)

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics


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