Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs

Seong Hoon Shim; Kyung Ho Kim; Hyung Jun Kim; Yun Hi Lee; Joonyeon Chang

doi:10.1166/jnn.2013.7721

Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs

Seong Hoon Shim
, Kyung Ho Kim
, Hyung Jun Kim
, Yun Hi Lee
, Joonyeon Chang^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.

Original language	English
Pages (from-to)	6333-6335
Number of pages	3
Journal	Journal of Nanoscience and Nanotechnology
Volume	13
Issue number	9
DOIs	https://doi.org/10.1166/jnn.2013.7721
Publication status	Published - 2013 Sept

Keywords

Anisotropic magnetoresistance (AMR)
Fe/MgO/GaAs
Ordinary magnetoresistance (OMR)

ASJC Scopus subject areas

Bioengineering
General Chemistry
Biomedical Engineering
General Materials Science
Condensed Matter Physics

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title = "Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs",

abstract = "The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.",

keywords = "Anisotropic magnetoresistance (AMR), Fe/MgO/GaAs, Ordinary magnetoresistance (OMR)",

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year = "2013",

month = sep,

doi = "10.1166/jnn.2013.7721",

language = "English",

volume = "13",

pages = "6333--6335",

journal = "Journal of Nanoscience and Nanotechnology",

issn = "1533-4880",

publisher = "American Scientific Publishers",

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TY - JOUR

T1 - Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs

AU - Shim, Seong Hoon

AU - Kim, Kyung Ho

AU - Kim, Hyung Jun

AU - Lee, Yun Hi

AU - Chang, Joonyeon

PY - 2013/9

Y1 - 2013/9

N2 - The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.

AB - The anisotropic magnetoresistance of a [100] oriented Fe stripe grown on MgO/GaAs was investigated in order to elucidate the magnetization switching of patterned Fe. A 15 nm thick Fe film was epitaxially grown on MgO/GaAs layers using molecular beam epitaxy and a 50 μm × 4 μm shaped Fe stripe was patterned along its magnetic easy axis of [100]. Negative (positive) resistance peaks appear at room (low) temperature in magnetoresistance measurement. A reversal in sign of the peak was evidently observed with decreasing temperature. Such a reversal of resistance peak is caused by the competition between Lorentz force (ordinary) and spin-orbit (extraordinary) dominated scattering processes in a magnetic domain, which is significantly affected by temperature.

KW - Anisotropic magnetoresistance (AMR)

KW - Fe/MgO/GaAs

KW - Ordinary magnetoresistance (OMR)

UR - https://www.scopus.com/pages/publications/84885460827

UR - https://www.scopus.com/pages/publications/84885460827#tab=citedBy

U2 - 10.1166/jnn.2013.7721

DO - 10.1166/jnn.2013.7721

M3 - Article

AN - SCOPUS:84885460827

SN - 1533-4880

VL - 13

SP - 6333

EP - 6335

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

IS - 9

ER -

Anisotropic magnetoresistance of an epitaxial Fe stripe grown on MgO/GaAs

Abstract

Keywords

ASJC Scopus subject areas

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