Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

A. Y. Polyakov; A. V. Govorkov; N. B. Smirnov; A. V. Markov; In Hwan Lee; Jin Woo Ju; S. J. Pearton

doi:10.1063/1.3115807

Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

A. Y. Polyakov, A. V. Govorkov, N. B. Smirnov, A. V. Markov, In Hwan Lee, Jin Woo Ju, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [11 2- 0] direction compared to the [0001] direction.

Original language	English
Article number	142103
Journal	Applied Physics Letters
Volume	94
Issue number	14
DOIs	https://doi.org/10.1063/1.3115807
Publication status	Published - 2009
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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@article{00c382e6cc9f41cdbea2af8dd6aed989,

title = "Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth",

abstract = "Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [11 2- 0] direction compared to the [0001] direction.",

author = "Polyakov, {A. Y.} and Govorkov, {A. V.} and Smirnov, {N. B.} and Markov, {A. V.} and Lee, {In Hwan} and Ju, {Jin Woo} and Pearton, {S. J.}",

note = "Funding Information: The work at IRM was supported in part by RFBR Grant Nos. 07-02-13523-ofi-c and 08-02-00058-a. The work at UF is partially supported by the Army Research Office under Grant Nos. DAAD19-01-1-0603 and DMR 0400416.",

year = "2009",

doi = "10.1063/1.3115807",

language = "English",

volume = "94",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "14",

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TY - JOUR

T1 - Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

AU - Polyakov, A. Y.

AU - Govorkov, A. V.

AU - Smirnov, N. B.

AU - Markov, A. V.

AU - Lee, In Hwan

AU - Ju, Jin Woo

AU - Pearton, S. J.

N1 - Funding Information: The work at IRM was supported in part by RFBR Grant Nos. 07-02-13523-ofi-c and 08-02-00058-a. The work at UF is partially supported by the Army Research Office under Grant Nos. DAAD19-01-1-0603 and DMR 0400416.

PY - 2009

Y1 - 2009

N2 - Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [11 2- 0] direction compared to the [0001] direction.

AB - Microcathodoluminescence (MCL) spectra and monochromatic MCL images were measured for GaN/InGaN multiquantum well (MQW) structures prepared by epitaxial lateral overgrowth (ELOG). The MQW related peak is redshifted from 462 nm in the normally grown ELOG window region to 482 nm in the laterally overgrown ELOG wing region. Correspondingly, the former appears as dark contrast stripes for long wavelength MCL images and as bright stripes for the short wavelength MCL images. The redshift is consistent with a higher indium incorporation efficiency for growth in the [11 2- 0] direction compared to the [0001] direction.

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U2 - 10.1063/1.3115807

DO - 10.1063/1.3115807

M3 - Article

AN - SCOPUS:64349116292

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

M1 - 142103

ER -

Anisotropy of in incorporation in GaN/InGaN multiquantum wells prepared by epitaxial lateral overgrowth

Abstract

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