Annealing effect of Al2O3 tunnel barriers in HfO2-based ReRAM devices on nonlinear resistive switching characteristics

Sukhyung Park, Kyoungah Cho, Jungwoo Jung, Sangsig Kim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


In this study, we demonstrate the enhancement of the nonlinear resistive switching characteristics of HfO2-based resistive random access memory (ReRAM) devices by carrying out thermal annealing of Al2O3 tunnel barriers. The nonlinearity of ReRAM device with an annealed Al2O3 tunnel barrier is determined to be 10.1, which is larger than that of the ReRAM device with an as-deposited Al2O3 tunnel barrier. From the electrical characteristics of the ReRAM devices with as-deposited and annealed Al2O3 tunnel barriers, it reveals that there is a trade-off relationship between nonlinearity in low-resistance state (LRS) current and the ratio of the high-resistance state (HRS) and the LRS. The enhancement of nonlinearity is attributed to a change in the conduction mechanism in the LRS of the ReRAM after the annealing. While the conduction mechanism before the annealing follows Ohmic conduction, the conduction of the ReRAM after the annealing is controlled by a trap-controlled space charge limited conduction mechanism. Additionally, the annealing of the Al2O3 tunnel barriers is also shown to improve the endurance and retention characteristics.

Original languageEnglish
Pages (from-to)7569-7572
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Issue number10
Publication statusPublished - 2015 Oct

Bibliographical note

Publisher Copyright:
Copyright © 2015 American Scientific Publishers All rights reserved.


  • AlO
  • HfO
  • Nonlinearity
  • ReRAM
  • Tunnel barrier

ASJC Scopus subject areas

  • Bioengineering
  • General Chemistry
  • Biomedical Engineering
  • General Materials Science
  • Condensed Matter Physics


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