Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers

Minghan Xian, Chaker Fares, Jinho Bae, Jihyun Kim, Fan Ren, S. J. Pearton

Research output: Contribution to journalArticlepeer-review

4 Citations (Scopus)

Abstract

Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 1013 cm-2 or 10 MeV protons to fluences of 1-3 × 1014 cm-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.

Original languageEnglish
Pages (from-to)P799-P804
JournalECS Journal of Solid State Science and Technology
Volume8
Issue number12
DOIs
Publication statusPublished - 2019

Bibliographical note

Funding Information:
The work at UF was partially sponsored by the Department of the Defense, Defense Threat Reduction Agency, No. HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova).The research at Korea University was supported by the National Research Foundation of Korea (2018R1D1A1A09083917) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20172010104830).

Publisher Copyright:
© 2019 The Electrochemical Society.

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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