Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers

Minghan Xian; Chaker Fares; Jinho Bae; Jihyun Kim; Fan Ren; S. J. Pearton

doi:10.1149/2.0231912jss

Annealing of proton and alpha particle damage in Au-W/β-Ga₂O₃ rectifiers

Minghan Xian, Chaker Fares, Jinho Bae, Jihyun Kim, Fan Ren, S. J. Pearton

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Vertical geometry Ga₂O₃ rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 10¹³ cm^-2 or 10 MeV protons to fluences of 1-3 × 10¹⁴ cm^-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm^-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga₂O₃, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.

Original language	English
Pages (from-to)	P799-P804
Journal	ECS Journal of Solid State Science and Technology
Volume	8
Issue number	12
DOIs	https://doi.org/10.1149/2.0231912jss
Publication status	Published - 2019

Bibliographical note

Funding Information:
The work at UF was partially sponsored by the Department of the Defense, Defense Threat Reduction Agency, No. HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova).The research at Korea University was supported by the National Research Foundation of Korea (2018R1D1A1A09083917) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20172010104830).

Publisher Copyright:
© 2019 The Electrochemical Society.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials

Access to Document

10.1149/2.0231912jss

Cite this

@article{d066b94a59f8417bac6593a3db4a6b0f,

title = "Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers",

abstract = "Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 1013 cm-2 or 10 MeV protons to fluences of 1-3 × 1014 cm-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.",

author = "Minghan Xian and Chaker Fares and Jinho Bae and Jihyun Kim and Fan Ren and Pearton, {S. J.}",

note = "Funding Information: The work at UF was partially sponsored by the Department of the Defense, Defense Threat Reduction Agency, No. HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova).The research at Korea University was supported by the National Research Foundation of Korea (2018R1D1A1A09083917) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20172010104830). Publisher Copyright: {\textcopyright} 2019 The Electrochemical Society.",

year = "2019",

doi = "10.1149/2.0231912jss",

language = "English",

volume = "8",

pages = "P799--P804",

journal = "ECS Journal of Solid State Science and Technology",

issn = "2162-8769",

publisher = "Electrochemical Society, Inc.",

number = "12",

}

TY - JOUR

T1 - Annealing of proton and alpha particle damage in Au-W/β-Ga2O3 rectifiers

AU - Xian, Minghan

AU - Fares, Chaker

AU - Bae, Jinho

AU - Kim, Jihyun

AU - Ren, Fan

AU - Pearton, S. J.

N1 - Funding Information: The work at UF was partially sponsored by the Department of the Defense, Defense Threat Reduction Agency, No. HDTRA1-17-1-011, monitored by Jacob Calkins and also by NSF DMR 1856662 (Tania Paskova).The research at Korea University was supported by the National Research Foundation of Korea (2018R1D1A1A09083917) and the Korea Institute of Energy Technology Evaluation and Planning (KETEP) (20172010104830). Publisher Copyright: © 2019 The Electrochemical Society.

PY - 2019

Y1 - 2019

N2 - Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 1013 cm-2 or 10 MeV protons to fluences of 1-3 × 1014 cm-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.

AB - Vertical geometry Ga2O3 rectifiers were irradiated with 18 MeV alpha particles to fluences of 1-3 × 1013 cm-2 or 10 MeV protons to fluences of 1-3 × 1014 cm-2 and then annealed to establish the thermal stability of the radiation damage. The rectifiers employed Au/W rectifying contacts to achieve the requisite thermal stability to allow for annealing studies. The carrier removal rates were ∼900 cm-1 for the α-particles and ∼200 for the protons. Annealing at 500°C was found to restore the carrier concentration in the α-particle irradiated devices, while 450°C annealing brought substantial recovery of the proton irradiated devices. This is a similar temperature range as established for annealing of plasma-induced damage in Ga2O3, suggesting a common origin of point defects, predominantly Ga vacancies and their complexes. The reverse breakdown voltages and diode on/off ratios are also significantly recovered by annealing after irradiation.

UR - http://www.scopus.com/inward/record.url?scp=85077499140&partnerID=8YFLogxK

U2 - 10.1149/2.0231912jss

DO - 10.1149/2.0231912jss

M3 - Article

AN - SCOPUS:85077499140

SN - 2162-8769

VL - 8

SP - P799-P804

JO - ECS Journal of Solid State Science and Technology

JF - ECS Journal of Solid State Science and Technology

IS - 12

ER -