Anodic bonding technique for silicon-to-ITO coated glass bonding

Woo Beom Choi, Byeong Kwon Ju, Yun Hi Lee, Myung Hwan Oh, Man Young Sung

Research output: Contribution to journalConference articlepeer-review


We performed silicon-to-In203:Sn coated glass bonding using anodic bonding process. Corning #7740 glass layer was deposited on In203:Sn coated glass by electron beam evaporation. It was confirmed that the composition of the deposited glass layer was nearly same as that of the bulk Corning #7740 glass plate using Auger electron spectroscopy (AES). In this work, silicon and In203:Sn coated glass with the deposited glass layer can be bonded at 190°C with an applied voltage of 6OVDC. In order to study the role of sodium ion, firstly, the bonding kinetics are modeled as resulting from the transport of sodium ions through the surface of the deposited glass layer. Secondary, the results of secondary ion mass spectroscopy (SIMS) analysis were used to confirm the modeled bonding kinetics of silicon-to-In203:Sn coated glass. This process can be applied for the vacuum packaging of microelectronic devices such as field emission display (FED).

Original languageEnglish
Pages (from-to)336-341
Number of pages6
JournalProceedings of SPIE - The International Society for Optical Engineering
Publication statusPublished - 1997 Jun 19
EventSmart Structures and Materials 1997: Smart Electronics and MEMS - San Diego, United States
Duration: 1997 Mar 31997 Mar 6

Bibliographical note

Funding Information:
This work was supported by Ministry of Trade, Industry and Energy in Korea.

Publisher Copyright:
© 1997 SPIE. All rights reserved.


  • Anodic bonding
  • Silicon-to-ito coated glass bonding
  • Sims analysis

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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