Anomalous Hall effect in insulating Ga1-xMnxAs

Sh U. Yuldashev; H. C. Jeon; H. S. Im; T. W. Kang; S. H. Lee; J. K. Furdyna

doi:10.1103/PhysRevB.70.193203

Anomalous Hall effect in insulating Ga_1-xMn_xAs

Sh U. Yuldashev, H. C. Jeon, H. S. Im, T. W. Kang, S. H. Lee, J. K. Furdyna

Research output: Contribution to journal › Article › peer-review

30 Citations (Scopus)

Abstract

We have investigated the effect of doping by Te on the anomalous Hall effect in Ga_1-xMn_xAs (x=0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga_1-xMn_xAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga_1-xMn _xAs eventually disappears, and the paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in the Ga_0.915Mn_0.085As has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma.

Original language	English
Article number	193203
Pages (from-to)	1-4
Number of pages	4
Journal	Physical Review B - Condensed Matter and Materials Physics
Volume	70
Issue number	19
DOIs	https://doi.org/10.1103/PhysRevB.70.193203
Publication status	Published - 2004 Nov

Bibliographical note

Funding Information:
We thank Tomasz Dietl for helpful discussion on the physics of the anomalous Hall effect. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University; by the KIST Vision 21 project, by the DARPA SpinS Program; and by the National Science Foundation Grant No. DMR02-45227.

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics

Access to Document

10.1103/PhysRevB.70.193203

Cite this

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title = "Anomalous Hall effect in insulating Ga1-xMnxAs",

abstract = "We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x=0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMn xAs eventually disappears, and the paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in the Ga0.915Mn0.085As has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma.",

author = "Yuldashev, {Sh U.} and Jeon, {H. C.} and Im, {H. S.} and Kang, {T. W.} and Lee, {S. H.} and Furdyna, {J. K.}",

note = "Funding Information: We thank Tomasz Dietl for helpful discussion on the physics of the anomalous Hall effect. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University; by the KIST Vision 21 project, by the DARPA SpinS Program; and by the National Science Foundation Grant No. DMR02-45227.",

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AU - Yuldashev, Sh U.

AU - Jeon, H. C.

AU - Im, H. S.

AU - Kang, T. W.

AU - Lee, S. H.

AU - Furdyna, J. K.

N1 - Funding Information: We thank Tomasz Dietl for helpful discussion on the physics of the anomalous Hall effect. This work was supported by the Korea Science and Engineering Foundation (KOSEF) through the Quantum Functional Semiconductor Research Center (QSRC) at Dongguk University; by the KIST Vision 21 project, by the DARPA SpinS Program; and by the National Science Foundation Grant No. DMR02-45227.

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N2 - We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x=0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMn xAs eventually disappears, and the paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in the Ga0.915Mn0.085As has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma.

AB - We have investigated the effect of doping by Te on the anomalous Hall effect in Ga1-xMnxAs (x=0.085). For this relatively high value of x the temperature dependence of resistivity shows an insulating behavior. It is well known that in Ga1-xMnxAs the Mn ions naturally act as acceptors. Additional doping by Te donors decreases the Curie temperature and increases the anomalous Hall resistivity. With increasing Te concentration the long-range ferromagnetic order in Ga1-xMn xAs eventually disappears, and the paramagnetic-to-spin glass transition is observed instead. The critical concentration of holes required for establishing ferromagnetic order in the Ga0.915Mn0.085As has been estimated by using the magnetic polaron percolation theory proposed by Kaminski and Das Sarma.

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